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HM5551 Datasheet, Equivalent, PLANAR TRANSISTOR.NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR |
| Part | HM5551 |
|---|---|
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Feature | HI-SINCERITY
MICROELECTRONICS CORP. HM5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE9507 Issued Date : 1996. 04. 09 Revised Date : 2004. 11. 24 Page No. : 1/4 Description The HM5551 is designed for general purpose applications requiring high breakdown voltages. Features • High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA) • Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temper. |
| Manufacture | Hi-Sincerity Mocroelectronics |
| Datasheet |
| Part | HM5551 |
|---|---|
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Feature | HI-SINCERITY
MICROELECTRONICS CORP. HM5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE9507 Issued Date : 1996. 04. 09 Revised Date : 2004. 11. 24 Page No. : 1/4 Description The HM5551 is designed for general purpose applications requiring high breakdown voltages. Features • High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA) • Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temper. |
| Manufacture | Hi-Sincerity Mocroelectronics |
| Datasheet |
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