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HM5551 Dataheets PDF



Part Number HM5551
Manufacturers Hi-Sincerity Mocroelectronics
Logo Hi-Sincerity Mocroelectronics
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet HM5551 DatasheetHM5551 Datasheet (PDF)

HI-SINCERITY MICROELECTRONICS CORP. HM5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE9507 Issued Date : 1996.04.09 Revised Date : 2004.11.24 Page No. : 1/4 Description The HM5551 is designed for general purpose applications requiring high breakdown voltages. Features • High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA) • Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ....

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HI-SINCERITY MICROELECTRONICS CORP. HM5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE9507 Issued Date : 1996.04.09 Revised Date : 2004.11.24 Page No. : 1/4 Description The HM5551 is designed for general purpose applications requiring high breakdown voltages. Features • High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA) • Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ................................................................................................................... 1.2 W • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base.


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