Document
HI-SINCERITY
MICROELECTRONICS CORP.
HM5551
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE9507 Issued Date : 1996.04.09 Revised Date : 2004.11.24 Page No. : 1/4
Description
The HM5551 is designed for general purpose applications requiring high breakdown voltages.
Features
• High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA) • Complements to PNP type HM5401
SOT-89
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (TA=25°C) ................................................................................................................... 1.2 W
• Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base.