HM621400H

HM621400H Series 4M High Speed SRAM (4-Mword × 1-bit) ADE-203-787D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM621400H is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features Single 5.0 V supply : 5.0 V ± 10 % Access time 10/12/15 ns (max) Completely static memory  No clock or timing strobe required Equal access and cycle times Directly TTL compatible  All inputs and outputs Operating current: 200/180/160 mA (max) TTL standby current: 70/60/50 mA (max) CMOS standby current: 5 mA (max) : 1.2 mA (max) (L-version) Data retension current: 0.8 mA (max) (L-version) Data retension voltage: 2 V (min) (L-version) Center VCC and VSS type pinout HM621400H Series Ordering Information Type No. HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Access time 10 ns 12 ns 15 ns 10 ns 12 ns 15 ns Package 400-mil 32-pin plastic SOJ (CP-32DB) Pin Arrangement HM621400HJP/HLJP Series A0 A1 A2 A3 A4 A5 CS VCC VSS Din WE A6 A7 A8 A9 A10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A21 A20 A19 A18 A...