Range version. HM6264BI Datasheet

HM6264BI version. Datasheet pdf. Equivalent

HM6264BI Datasheet
Recommendation HM6264BI Datasheet
Part HM6264BI
Description 64k SRAM (8-kword x 8-bit) Wide Temperature Range version
Feature HM6264BI; HM6264BI Series 64k SRAM (8-kword × 8-bit) Wide Temperature Range version ADE-203-492C (Z) Rev. 3.0.
Manufacture Hitachi Semiconductor
Datasheet
Download HM6264BI Datasheet




Hitachi Semiconductor HM6264BI
HM6264BI Series
64k SRAM (8-kword × 8-bit)
Wide Temperature Range version
ADE-203-492C (Z)
Rev. 3.0
May. 8, 2000
Description
The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and
low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot
print pitch width), 600 mil plastic DIP, is available for high density mounting.
Features
Single 5 V supply: 5 V ± 10%
Access time: 100/120 ns (max)
Power dissipation:
Standby: 10 µW (typ)
Operation: 15 mW (typ) (f = 1 MHz)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Common data input and output
Three state output
Directly TTL compatible
All inputs and outputs
Battery backup operation capability
Operating temperature range: –40˚C to +85˚C



Hitachi Semiconductor HM6264BI
HM6264BI Series
Ordering Information
Type No.
HM6264BLPI-10
HM6264BLPI-12
HM6264BLFPI-10T
HM6264BLFPI-12T
Access time
100 ns
120 ns
100 ns
120 ns
Package
600-mil, 28-pin plastic DIP (DP-28)
450-mil, 28-pin plastic SOP(FP-28DA)
Pin Arrangement
HM6264BLPI/BLFPI Series
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
1 28
2 27
3 26
4 25
5 24
6 23
7 22
8 21
9 20
10 19
11 18
12 17
13 16
14 15
(Top view)
VCC
WE
CS2
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
2



Hitachi Semiconductor HM6264BI
Pin Description
Pin name
A0 to A12
I/O1 to I/O8
CS1
CS2
WE
OE
NC
VCC
VSS
Function
Address input
Data input/output
Chip select 1
Chip select 2
Write enable
Output enable
No connection
Power supply
Ground
Block Diagram
A11
A8
A9
A7
A12
A5
A6
A4
I/O1
I/O8
CS2
CS1
WE
OE
Row
decoder
Memory array
256 × 256
Input
data
control
Column I/O
Column decoder
A1 A2 A0 A10 A3
Timing pulse generator
Read, Write control
HM6264BI Series
VCC
VSS
3







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