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HM628511HC Datasheet, Equivalent, x 8-bit.4M High Speed SRAM (512-kword x 8-bit) 4M High Speed SRAM (512-kword x 8-bit) |
| Part | HM628511HC |
|---|---|
| Description | 4M High Speed SRAM (512-kword x 8-bit) |
| Feature | HM628511HC Series
4M High Speed SRAM (51 2-kword × 8-bit)
ADE-203-1197 (Z) Pre liminary Rev. 0. 0 Nov. 9, 2000 Descript ion The HM628511HC Series is a 4-Mbit h igh speed static RAM organized 512-k wo rd × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high spee d circuit designing technology. It is m ost appropriate for the application whi ch requires high speed, high density me mory and wide bit width configuration, such as cache and buffer memory in syst em. It is packaged in 400mil 36-pin pla stic SOJ. Features • Single 5. 0 V su pply: 5. 0 V ± 10 % . |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
| Part | HM628511HC |
|---|---|
| Description | 4M High Speed SRAM (512-kword x 8-bit) |
| Feature | HM628511HC Series
4M High Speed SRAM (51 2-kword × 8-bit)
ADE-203-1197 (Z) Pre liminary Rev. 0. 0 Nov. 9, 2000 Descript ion The HM628511HC Series is a 4-Mbit h igh speed static RAM organized 512-k wo rd × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high spee d circuit designing technology. It is m ost appropriate for the application whi ch requires high speed, high density me mory and wide bit width configuration, such as cache and buffer memory in syst em. It is packaged in 400mil 36-pin pla stic SOJ. Features • Single 5. 0 V su pply: 5. 0 V ± 10 % . |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
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