HM628511HC 8-bit Datasheet pdf - x 8-bit. Equivalent, Catalog

HM628511HC Series

4M High Speed SRAM (512-kword × 8-bit)

ADE-203-1197 (Z)

Preliminary

Rev. 0.0

Nov. 9, 2000

Description

The HM628511HC Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized

high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit

designing technology. It is most appropriate for the application which requires high speed, high density

memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-

mil 36-pin plastic SOJ.

Features

• Single 5.0 V supply: 5.0 V ± 10 %

• Access time: 10 ns (max)

• Completely static memory

 No clock or timing strobe required

• Equal access and cycle times

• Directly TTL compatible

 All inputs and outputs

• Operating current: 140 mA (max)

• TTL standby current: 40 mA (max)

• CMOS standby current : 5 mA (max)

: 1.2 mA (max) (L-version)

• Data retension current: 0.8 mA (max) (L-version)

• Data retension voltage: 2 V (min) (L-version)

• Center VCC and VSS type pinout

Preliminary: The specification of this device are subject to change without notice. Please contact your

nearest Hitachi’s Sales Dept. regarding specification.

x 8-bit. HM628511HC Datasheet