Document
HM628512BI Series
4 M SRAM (512-kword × 8-bit)
ADE-203-935C (Z) Rev. 2.0 Aug. 24, 1999 Description
The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin DIP.
Features
• Single 5 V supply • Access time: 70/85 ns (max) • Power dissipation Active: 50 mW/MHz (typ) Standby: 10 µW (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common data input and output: Three state output • Directly TTL compatible: All inputs and outputs • Battery backup operation • Operating temperature: –40 to +85˚C
HM628512BI Series
Ordering Information
Type No. HM628512BLPI-7 HM628512BLPI-8 HM628512BLFPI-7 HM628512BLFPI-8 HM628512BLTTI-7 HM628512BLTTI-8 HM628512BLRRI-7 HM628512BLRRI-8 Access time 70 ns 85 ns 70 ns 85 ns 70 ns 85 ns 70 ns 85 ns Package 600-mil 32-pin plastic DIP (DP-32) 525-mil 32-pin plastic SOP (FP-32D) 400-mil 32-pin plastic TSOP II (TTP-32D) 400-mil 32-pin plastic TSOP II reverse (TTP-32DR)
2
HM628512BI Series
Pin Arrangement
HM628512BLPI Series HM628512BLFPI Series A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) HM628512BLRRI Series VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 (Top view) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS HM628512BLTTI Series 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3
Pin Description
Pin name A0 to A18 I/O0 to I/O7 CS OE WE VCC VSS Function Address input Data input/output Chip select Output enable Write enable Power supply Ground
3
HM628512BI Series
Block Diagram
V CC V SS
• • • • •
A18 A16 A1 A0 A2 A12 A14 A3 A7 A6 Row Decoder Memory Matrix 1,024 × 4,096
I/O0 Input Data Control I/O7
• •
Column I/O Column Decoder
• •
A10 A4 A5 A13 A17A15A8 A9 A11
• •
CS WE OE
Timing Pulse Generator Read/Write Control
4
HM628512BI Series
Function Table
WE × H H L L CS H L L L L OE × H L H L Mode Not selected Output disable Read Write Write VCC current I SB , I SB1 I CC I CC I CC I CC Dout pin High-Z High-Z Dout Din Din Ref. cycle — — Read cycle Write cycle (1) Write cycle (2)
Note: ×: H or L
Absolute Maximum Ratings
Parameter Power supply voltage Voltage on any pin relative to V SS Power dissipation Operating temperature Storage temperature Storage temperature under bias Symbol VCC VT PT Topr Tstg Tbias Value –0.5 to +7.0 –0.5* to V CC + 0.3* 1.0 –40 to +85 –55 to +125 –40 to +85
1 2
Unit V V W °C °C °C
Notes: 1. –3.0 V for pulse half-width ≤ 30 ns 2. Maximum voltage is 7.0 V
Recommended DC Operating Conditions (Ta = –40 to +85 °C)
Parameter Supply voltage Symbol VCC VSS Input high voltage Input low voltage Note: VIH VIL Min 4.5 0 2.4 –0.3
*1
Typ 5.0 0 — —
Max 5.5 0 VCC + 0.3 0.6
Unit V V V V
1. –3.0 V for pulse half-width ≤ 30 ns
5
HM628512BI Series
DC Characteristics (Ta = –40 to +85°C, VCC = 5 V ±10% , VSS = 0 V)
Parameter Input leakage current Output leakage current Operating power supply current: DC Operating power supply current Symbol |ILI| |ILO | I CC I CC1 Min — — — — Typ*1 Max — — 8 45 1 1 15 70 Unit µA µA mA mA Test conditions Vin = VSS to V CC CS = VIH or OE = VIH or WE = VIL, VI/O = VSS to V CC CS = VIL, others = VIH/VIL, I I/O = 0 mA Min cycle, duty = 100% CS = VIL, others = VIH/VIL I I/O = 0 mA Cycle time = 1 µs, duty = 100% I I/O = 0 mA, CS ≤ 0.2 V VIH ≥ V CC – 0.2 V, VIL ≤ 0.2 V CS = VIH Vin ≥ 0 V, CS ≥ V CC – 0.2 V I OL = 2.1 mA I OH = –1.0 mA
Operating power supply current
I CC2
—
10
20
mA
Standby power supply current: DC
I SB
— — — 2.4
1 2 — —
3 100 0.4 —
mA µA V V
Standby power supply current (1): DC I SB1 Output low voltage Output high voltage Note: VOL VOH
1. Typical values are at VCC = 5.0 V, Ta = +25°C and specified loading, and not guaranteed.
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter Input capacitance*
1 1
Symbol Cin CI/O
Typ — —
Max 8 10
Unit pF pF
Test conditions Vin = 0 V VI/O = 0 V
Input/output capacitance* Note:
1. This parameter is sampled and not 100% tested.
6
HM628512BI Series
AC Characteristics (Ta = –40 to +85°C, VCC = 5 V ± 10%, unless otherwise noted.)
Test Conditions • • • • Input pulse levels: 0.5 V to 2.5 V Input rise and fall time: 5 ns Input and output timing reference levels: 1.5 V Output load: 1 TTL Gate + C L (100 pF) (Including scope and jig)
Read Cycle
HM62851.