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HM628512BI Dataheets PDF



Part Number HM628512BI
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 4 M SRAM (512-kword x 8-bit)
Datasheet HM628512BI DatasheetHM628512BI Datasheet (PDF)

HM628512BI Series 4 M SRAM (512-kword × 8-bit) ADE-203-935C (Z) Rev. 2.0 Aug. 24, 1999 Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin DIP. Features .

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HM628512BI Series 4 M SRAM (512-kword × 8-bit) ADE-203-935C (Z) Rev. 2.0 Aug. 24, 1999 Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin DIP. Features • Single 5 V supply • Access time: 70/85 ns (max) • Power dissipation  Active: 50 mW/MHz (typ)  Standby: 10 µW (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common data input and output: Three state output • Directly TTL compatible: All inputs and outputs • Battery backup operation • Operating temperature: –40 to +85˚C HM628512BI Series Ordering Information Type No. HM628512BLPI-7 HM628512BLPI-8 HM628512BLFPI-7 HM628512BLFPI-8 HM628512BLTTI-7 HM628512BLTTI-8 HM628512BLRRI-7 HM628512BLRRI-8 Access time 70 ns 85 ns 70 ns 85 ns 70 ns 85 ns 70 ns 85 ns Package 600-mil 32-pin plastic DIP (DP-32) 525-mil 32-pin plastic SOP (FP-32D) 400-mil 32-pin plastic TSOP II (TTP-32D) 400-mil 32-pin plastic TSOP II reverse (TTP-32DR) 2 HM628512BI Series Pin Arrangement HM628512BLPI Series HM628512BLFPI Series A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) HM628512BLRRI Series VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 (Top view) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS HM628512BLTTI Series 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 Pin Description Pin name A0 to A18 I/O0 to I/O7 CS OE WE VCC VSS Function Address input Data input/output Chip select Output enable Write enable Power supply Ground 3 HM628512BI Series Block Diagram V CC V SS • • • • • A18 A16 A1 A0 A2 A12 A14 A3 A7 A6 Row Decoder Memory Matrix 1,024 × 4,096 I/O0 Input Data Control I/O7 • • Column I/O Column Decoder • • A10 A4 A5 A13 A17A15A8 A9 A11 • • CS WE OE Timing Pulse Generator Read/Write Control 4 HM628512BI Series Function Table WE × H H L L CS H L L L L OE × H L H L Mode Not selected Output disable Read Write Write VCC current I SB , I SB1 I CC I CC I CC I CC Dout pin High-Z High-Z Dout Din Din Ref. cycle — — Read cycle Write cycle (1) Write cycle (2) Note: ×: H or L Absolute Maximum Ratings Parameter Power supply voltage Voltage on any pin relative to V SS Power dissipation Operating temperature Storage temperature Storage temperature under bias Symbol VCC VT PT Topr Tstg Tbias Value –0.5 to +7.0 –0.5* to V CC + 0.3* 1.0 –40 to +85 –55 to +125 –40 to +85 1 2 Unit V V W °C °C °C Notes: 1. –3.0 V for pulse half-width ≤ 30 ns 2. Maximum voltage is 7.0 V Recommended DC Operating Conditions (Ta = –40 to +85 °C) Parameter Supply voltage Symbol VCC VSS Input high voltage Input low voltage Note: VIH VIL Min 4.5 0 2.4 –0.3 *1 Typ 5.0 0 — — Max 5.5 0 VCC + 0.3 0.6 Unit V V V V 1. –3.0 V for pulse half-width ≤ 30 ns 5 HM628512BI Series DC Characteristics (Ta = –40 to +85°C, VCC = 5 V ±10% , VSS = 0 V) Parameter Input leakage current Output leakage current Operating power supply current: DC Operating power supply current Symbol |ILI| |ILO | I CC I CC1 Min — — — — Typ*1 Max — — 8 45 1 1 15 70 Unit µA µA mA mA Test conditions Vin = VSS to V CC CS = VIH or OE = VIH or WE = VIL, VI/O = VSS to V CC CS = VIL, others = VIH/VIL, I I/O = 0 mA Min cycle, duty = 100% CS = VIL, others = VIH/VIL I I/O = 0 mA Cycle time = 1 µs, duty = 100% I I/O = 0 mA, CS ≤ 0.2 V VIH ≥ V CC – 0.2 V, VIL ≤ 0.2 V CS = VIH Vin ≥ 0 V, CS ≥ V CC – 0.2 V I OL = 2.1 mA I OH = –1.0 mA Operating power supply current I CC2 — 10 20 mA Standby power supply current: DC I SB — — — 2.4 1 2 — — 3 100 0.4 — mA µA V V Standby power supply current (1): DC I SB1 Output low voltage Output high voltage Note: VOL VOH 1. Typical values are at VCC = 5.0 V, Ta = +25°C and specified loading, and not guaranteed. Capacitance (Ta = +25°C, f = 1 MHz) Parameter Input capacitance* 1 1 Symbol Cin CI/O Typ — — Max 8 10 Unit pF pF Test conditions Vin = 0 V VI/O = 0 V Input/output capacitance* Note: 1. This parameter is sampled and not 100% tested. 6 HM628512BI Series AC Characteristics (Ta = –40 to +85°C, VCC = 5 V ± 10%, unless otherwise noted.) Test Conditions • • • • Input pulse levels: 0.5 V to 2.5 V Input rise and fall time: 5 ns Input and output timing reference levels: 1.5 V Output load: 1 TTL Gate + C L (100 pF) (Including scope and jig) Read Cycle HM62851.


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