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HM62G18512

Hitachi Semiconductor

8M Synchronous Fast Static RAM(512k-word x 18-bit)

HM62G18512 Series 8M Synchronous Fast Static RAM (512k-word × 18-bit) ADE-203-1185 (Z) Preliminary Rev. 0.0 Jun. 12, 20...


Hitachi Semiconductor

HM62G18512

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Description
HM62G18512 Series 8M Synchronous Fast Static RAM (512k-word × 18-bit) ADE-203-1185 (Z) Preliminary Rev. 0.0 Jun. 12, 2000 Description The HM62G18512 is a synchronous fast static RAM organized as 512-kword × 18-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in standard 119bump BGA. Note: All power supply and ground pins must be connected for proper operation of the device. Features Power supply: 3.3 V +10%, –5% Clock frequency: 200 MHz to 250 MHz Internal self-timed late write Byte write control (2 byte write selects, one for each 9-bit) Optional ×36 configuration HSTL compatible I/O Programmable impedance output drivers User selective input trip-point Differential, HSTL clock inputs Asynchronous G output control Asynchronous sleep mode Limited set of boundary scan JTAG IEEE 1149.1 compatible Protocol: Single clock register-register mode Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest Hitachi’s Sales Dept. regarding specifications. HM62G18512 Series Ordering Information Type No. HM62G18512BP-4 HM62G18512BP-5 Access time 2.1 ns 2.5 ns Cycle time 4.0 ns 5.0 ns Package 119-bump 1. 27 mm 14 mm × 22 mm BGA (BP-119A) Pin Arra...




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