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HM62W16255HI

Hitachi Semiconductor

4M High Speed SRAM (256-kword x 16-bit)

HM62W16255HI Series 4M High Speed SRAM (256-kword × 16-bit) ADE-203-1038B (Z) Rev. 2.0 Jan. 20, 2000 Description The HM...


Hitachi Semiconductor

HM62W16255HI

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Description
HM62W16255HI Series 4M High Speed SRAM (256-kword × 16-bit) ADE-203-1038B (Z) Rev. 2.0 Jan. 20, 2000 Description The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII. Features Single 3.3 V supply: 3.3 V ± 0.3V Access time: 15 ns (max) Completely static memory  No clock or timing strobe required Equal access and cycle times Directly TTL compatible  All inputs and outputs Operating current: 160 mA (max) TTL standby current: 50 mA (max) CMOS standby current: 5 mA (max) Center VCC and VSS type pinout Temperature range: –40 to 85°C HM62W16255HI Series Ordering Information Type No. HM62W16255HJPI-15 HM62W16255HTTI-15 Access time 15 ns 15 ns Package 400-mil 44-pin plastic SOJ (CP-44D) 400-mil 44-pin plastic TSOPII (TTP-44DE) Pin Arrangement HM62W16255HJPI Series A0 A1 A2 A3 A4 CS I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A17 A16 A15 OE UB LB I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 NC A1...




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