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HM62W8511H Datasheet, Equivalent, x 8-bit.4M High Speed SRAM (512-kword x 8-bit) 4M High Speed SRAM (512-kword x 8-bit) |
| Part | HM62W8511H |
|---|---|
| Description | 4M High Speed SRAM (512-kword x 8-bit) |
| Feature | HM62W8511H Series
4M High Speed SRAM (51 2-kword × 8-bit)
ADE-203-750D (Z) Rev . 1. 0 Sep. 15, 1998 Description The HM6 2W8511H is a 4-Mbit high speed static R AM organized 512-kword × 8-bit. It has realized high speed access time by emp loying CMOS process (4-transistor + 2-p oly resistor memory cell) and high spee d circuit designing technology. It is m ost appropriate for the application whi ch requires high speed, high density me mory and wide bit width configuration, such as cache and buffer memory in syst em. The HM62W8511H is packaged in 400-m il 36-pin SOJ for high density surface mounting. Featu . |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
| Part | HM62W8511H |
|---|---|
| Description | 4M High Speed SRAM (512-kword x 8-bit) |
| Feature | HM62W8511H Series
4M High Speed SRAM (51 2-kword × 8-bit)
ADE-203-750D (Z) Rev . 1. 0 Sep. 15, 1998 Description The HM6 2W8511H is a 4-Mbit high speed static R AM organized 512-kword × 8-bit. It has realized high speed access time by emp loying CMOS process (4-transistor + 2-p oly resistor memory cell) and high spee d circuit designing technology. It is m ost appropriate for the application whi ch requires high speed, high density me mory and wide bit width configuration, such as cache and buffer memory in syst em. The HM62W8511H is packaged in 400-m il 36-pin SOJ for high density surface mounting. Featu . |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
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