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x 8-bit. HM62W8511HC Datasheet |
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![]() HM62W8511HC Series
4M High Speed SRAM (512-kword × 8-bit)
ADE-203-1201 (Z)
Preliminary
Rev. 0.0
Sep. 20, 2000
Description
The HM62W8511HC is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
technology. It is most appropriate for the application which requires high speed, high density memory and
wide bit width configuration, such as cache and buffer memory in system. The HM62W8511HC is packaged
in 400-mil 36-pin SOJ for high density surface mounting.
Features
• Single supply : 3.3 V ± 0.3 V
• Access time : 10 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current : 115 mA (max)
• TTL standby current : 40 mA (max)
• CMOS standby current : 5 mA (max)
: 1 mA (max) (L-version)
• Data retension current : 0.6 mA (max) (L-version)
• Data retension voltage : 2 V (min) (L-version)
• Center VCC and VSS type pinout
Preliminary: The specification of this device are subject to change without notice. Please contact your nearest
Hitachi’s Sales Dept. regarding specification.
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![]() HM62W8511HC Series
Ordering Information
Type No.
HM62W8511HCJP-10
HM62W8511HCLJP-10
Access time
10 ns
10 ns
Package
400-mil 36-pin plastic SOJ (CP-36D)
2
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![]() Pin Arrangement
HM62W8511HC Series
36-pin SOJ
A0 1
A1 2
A2 3
A3 4
A4 5
CS 6
I/O1 7
I/O2 8
VCC
VSS
9
10
I/O3 11
I/O4 12
WE 13
A5 14
A6 15
A7 16
A8 17
A9 18
36 NC
35 A18
34 A17
33 A16
32 A15
31 OE
30 I/O8
29 I/O7
28 VSS
27 VCC
26 I/O6
25 I/O5
24 A14
23 A13
22 A12
21 A11
20 A10
19 NC
(Top View)
Pin Description
Pin name
A0 to A18
I/O1 to I/O8
CS
OE
WE
VCC
VSS
NC
Function
Address input
Data input/output
Chip select
Output enable
Write enable
Power supply
Ground
No connection
3
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