HM62W8511HI

HM62W8511HI Series 4M High Speed SRAM (512-kword × 8-bit) ADE-203-1036A(Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W8511HI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 36-pin SOJ. Features Single supply : 3.3 V ± 0.3 V Access time 15 ns (max) Completely static memory  No clock or timing strobe required Equal access and cycle times Directly TTL compatible  All inputs and outputs Operating current : 130 mA (max) TTL standby current : 50 mA (max) CMOS standby current : 5 mA (max) Center VCC and VSS type pinout Temperature range: –40 to 85°C HM62W8511HI Series Ordering Information Type No. HM62W8511HJPI-15 Access time 15 ns Package 400-mil 36-pin plastic SOJ (CP-36D) Pin Arrangement HM62W8511HJPI Series A0 A1 A2 A3 A4 CS I/O1 I/O2 VCC VSS I/O3 I/O4 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 (Top View) 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 NC A18 A17 A16 A15 OE I/O8 I/O7 VSS VCC I/O6 I/O5 A14 A13 A12 A11 A10 NC 2 HM62W8511HI Series Pin Description Pin name A0 to A18 I/O1 to I/O8 CS OE WE VCC VSS NC Function Address input Data input/output Chip select Outpu...