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HM62W8512B Datasheet, Equivalent, x 8-bit.

4 M SRAM (512-kword x 8-bit)

4 M SRAM (512-kword x 8-bit)

 

 

 

Part HM62W8512B
Description 4 M SRAM (512-kword x 8-bit)
Feature HM62W8512B Series 4 M SRAM (512-kword × 8-bit) ADE-203-904E (Z) Rev.
4.
0 Oct.
20, 1999 Description The Hitachi HM62W 8512B is a 4-Mbit static RAM organized 512-kword × 8-bit.
It realizes higher density, higher performance and low pow er consumption by employing 0.
35 µm Hi -CMOS process technology.
The device, p ackaged in a 525-mil SOP (foot print pi tch width) or 400-mil TSOP TYPE II is a vailable for high density mounting.
The HM62W8512B is suitable for battery bac kup system.
Features
• Single 3.
3 V supply: 3.
3 V ± 0.
3 V
• Access time: 55/70 ns (max)
• Power dissipation Active: 16.
5 mW/MHz (ty .
Manufacture Hitachi Semiconductor
Datasheet
Download HM62W8512B Datasheet
Part HM62W8512B
Description 4 M SRAM (512-kword x 8-bit)
Feature HM62W8512B Series 4 M SRAM (512-kword × 8-bit) ADE-203-904E (Z) Rev.
4.
0 Oct.
20, 1999 Description The Hitachi HM62W 8512B is a 4-Mbit static RAM organized 512-kword × 8-bit.
It realizes higher density, higher performance and low pow er consumption by employing 0.
35 µm Hi -CMOS process technology.
The device, p ackaged in a 525-mil SOP (foot print pi tch width) or 400-mil TSOP TYPE II is a vailable for high density mounting.
The HM62W8512B is suitable for battery bac kup system.
Features
• Single 3.
3 V supply: 3.
3 V ± 0.
3 V
• Access time: 55/70 ns (max)
• Power dissipation Active: 16.
5 mW/MHz (ty .
Manufacture Hitachi Semiconductor
Datasheet
Download HM62W8512B Datasheet

HM62W8512B

HM62W8512B
HM62W8512B

HM62W8512B

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