PLANAR TRANSISTOR. HM772A Datasheet

HM772A TRANSISTOR. Datasheet pdf. Equivalent

HM772A Datasheet
Recommendation HM772A Datasheet
Part HM772A
Description PNP EPITAXIAL PLANAR TRANSISTOR
Feature HM772A; HI-SINCERITY MICROELECTRONICS CORP. HM772A PNP Epitaxial Planar Transistor Spec. No. : HM200207 Iss.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HM772A Datasheet




Hi-Sincerity Mocroelectronics HM772A
HI-SINCERITY
MICROELECTRONICS CORP.
HM772A
PNP Epitaxial Planar Transistor
Spec. No. : HM200207
Issued Date : 2000.12.01
Revised Date : 2006.07.27
Page No. : 1/4
Description
The HM772A is designed for use in output stage of amplifier, voltage regulator, DC-DC
converter and driver.
SOT-89
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature.............................................................................................................................................. -55 ~ +150 °C
Junction Temperature ..................................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ................................................................................................................................ 1 W (Note1)
Total Power Dissipation (TA=25°C) ................................................................................................................................ 2 W (Note2)
Total Power Dissipation (TA=25°C) ............................................................................................................................. 1.5 W (Note3)
Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ............................................................................................................................................ -60 V
VCEO Collector to Emitter Voltage......................................................................................................................................... -50 V
VEBO Emitter to Base Voltage ................................................................................................................................................. -5 V
IC Collector Current (continuous) ............................................................................................................................................ -3 A
IC Collector Current (pulse)............................................................................................................................................ -7 A (Note4)
Note1: When tested in free air condition, without heat sinking.
Note2: When mounted on a 40X40X1mm ceramic board.
Note3: Printed circuit board 2mm thick, collector plating 1cm square or larger.
Note4: Single pulse PW=1ms
Electrical Characteristics (TA=25°C)
Symbol
Min. Typ. Max.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
-60 -
-
-50 -
-
-5 -
-
- - -1
- - -1
- -0.3 -0.5
- -1 -2
30 -
-
160 - 320
- 80 -
- 55 -
Classification Of hFE2
Rank
Range
P
160-320
Unit
V
V
V
uA
uA
V
V
MHz
pF
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-100mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HM772A
HSMC Product Specification



Hi-Sincerity Mocroelectronics HM772A
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HM200207
Issued Date : 2000.12.01
Revised Date : 2006.07.27
Page No. : 2/4
Current Gain & Collector Current
1000
VCE=2V
100
Saturation Voltage & Collector Current
10
1
VBE(sat) @ IC=10IB
10 0.1
1
0.01
0.1
1 10 100
Collector Current (mA)
1000 10000
0.01
0.01
0.1
VCE(sat) @ IC=10IB
1 10 100
Collector Current (mA)
1000 10000
Capacitance & Reverse-Biased Voltage
1000
Cutoff Frequency & Collector Current
1000
100 100 VCE=5V
Cob
10 10
1
0.1
1 10
Reverse-Biased Voltage (V)
100
Power Derating
1200
1000
800
600
400
200
0
0 20 40 60 80 100 120 140 160
Ambient Temperature-Ta(oC)
HM772A
1
1
10000
1000
100
10
1
1
10 100
Collector Current (mA)
Safe Operating Area
1000
PT=1ms
PT=100ms
PT=1s
10
Forward Biased Voltage-VCE (V)
100
HSMC Product Specification



Hi-Sincerity Mocroelectronics HM772A
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-89 Dimension
Spec. No. : HM200207
Issued Date : 2000.12.01
Revised Date : 2006.07.27
Page No. : 3/4
C
B
1
2
E
F
G
A
D
3
J
H
I
Marking:
Date Code
H7 7 2A
Control Code
Pb Free Mark
Pb-Free: " " (Note)
Normal: None
Note: Green label is used for pb-free packing
Pin Style: 1.Base 2.Collector 3.Emitter
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 4.40 4.60
B 4.05 4.25
C 1.50 1.70
D 2.40 2.60
E 0.36 0.51
F *1.50 -
G *3.00
-
H 1.40 1.60
I 0.35 0.41
*: Typical, Unit: mm
3-Lead SOT-89 Plastic
Surface Mounted Package
HSMC Package Code: M
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HM772A
HSMC Product Specification







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