HM965

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9511 Issued Date : 1996.04.12 Revised Date : 2002.10.01 Page No. : 1/3 HM965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM965 is designed for use as AF output amplifier and glash unit. Features Low VCE(sat) High performance at low supply voltage SOT-89 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .................................................................................... 1.2 W Maximum Voltages and Currents (Ta=25°C) BVCBO Collector to Base Voltage....................................................................................... 40 V BVCEO Collector to Emitter Voltage.................................................................................... 20 V BVEBO Emitter to Base Voltage............................................................................................ 7 V IC Collector Current (Continuous) ......................................................................................... 5 A IC Collector Current (Peak PT=10mS) .................................................................................. 8 A Characteristics (Ta=25°C) Symbol Min. Typ. BVCBO 40 - BVC...