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PLANAR TRANSISTOR. HMBT1015 Datasheet

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PLANAR TRANSISTOR. HMBT1015 Datasheet
















HMBT1015 TRANSISTOR. Datasheet pdf. Equivalent













Part

HMBT1015

Description

PNP EPITAXIAL PLANAR TRANSISTOR



Feature


HI-SINCERITY MICROELECTRONICS CORP. HMBT 1015 PNP EPITAXIAL PLANAR TRANSISTOR S pec. No. : HE6804 Issued Date : 1992.08 .25 Revised Date : 2004.08.10 Page No. : 1/4 Description The HMBT1015 is des igned for use in driver stage of AF amp lifier and general purpose amplificatio n. Absolute Maximum Ratings SOT-23 Maximum Temperatures Storage Tempera ture.................
Manufacture

Hi-Sincerity Mocroelectronics

Datasheet
Download HMBT1015 Datasheet


Hi-Sincerity Mocroelectronics HMBT1015

HMBT1015; ........................................ ....................................... ............................ -55 ~ +150 °C Junction Temperature.............. ....................................... ....................................... ......................... 150 °C Maxim um • Maximum Power Dissipation Total Power Dissipation (TA=25°C).......... ........................


Hi-Sincerity Mocroelectronics HMBT1015

........................................ ...................................... 225 mW • Maximum Voltages and Current s (TA=25°C) VCBO Collector to Base Vol tage .................................. ....................................... .................. .


Hi-Sincerity Mocroelectronics HMBT1015

.





Part

HMBT1015

Description

PNP EPITAXIAL PLANAR TRANSISTOR



Feature


HI-SINCERITY MICROELECTRONICS CORP. HMBT 1015 PNP EPITAXIAL PLANAR TRANSISTOR S pec. No. : HE6804 Issued Date : 1992.08 .25 Revised Date : 2004.08.10 Page No. : 1/4 Description The HMBT1015 is des igned for use in driver stage of AF amp lifier and general purpose amplificatio n. Absolute Maximum Ratings SOT-23 Maximum Temperatures Storage Tempera ture.................
Manufacture

Hi-Sincerity Mocroelectronics

Datasheet
Download HMBT1015 Datasheet




 HMBT1015
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT1015
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6804
Issued Date : 1992.08.25
Revised Date : 2004.08.10
Page No. : 1/4
Description
The HMBT1015 is designed for use in driver stage of AF amplifier and general
purpose amplification.
Absolute Maximum Ratings
SOT-23
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150 °C
Junction Temperature..................................................................................................................... 150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW
Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage .......................................................................................................................... -50 V
VCEO Collector to Emitter Voltage....................................................................................................................... -50 V
VEBO Emitter to Base Voltage ............................................................................................................................... -5 V
IC Collector Current ...................................................................................................................................... -150 mA
Electrical Characteristics (TA=25°C)
Symbol Min. Typ. Max.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
-50
-50
-5
-
-
-
-
120
25
80
-
--
--
--
- -100
- -100
- -300
- -1.1
- 700
--
--
-7
Classification Of hFE1
Rank
Range
A4Y
120-240
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-50V
VEB=-5V
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-2mA
VCE=-6V, IC=-150mA
VCE=-10V, IC=-1mA, f=100MHz
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
A4G
200-400
A4B
350-700
HMBT1015
HSMC Product Specification




 HMBT1015
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6804
Issued Date : 1992.08.25
Revised Date : 2004.08.10
Page No. : 2/4
Current Gain & Collector Current
1000
125oC
75oC
25oC
100
hFE @ VCE=6V
Saturation Voltage & Collector Current
1000
VCE(sat) @ IC=10IB
75oC
100 125oC
25oC
10
0.1
1 10 100
Collector Current-IC (mA)
1000
10000
Saturation Voltage & Collector Current
VBE(sat) @ IC=10IB
1000
75oC
25oC
125oC
100
0.1
1 10 100
Collector Current-IC (mA)
1000
Cutoff Frequency & Collector Current
1000
VCE=10
100
10
10
0.1
1 10 100
Collector Current-IC (mA)
1000
Capacitance & Reverse-Biased Voltage
10.00
Cob
1.00
0.1
1 10
Reverse-Biased Voltage (V)
Safe Operating Area
1
PT=1ms
PT=1s
0.1
PT=100ms
100
1
1
HMBT1015
10 100
Collector Current (mA)
1000
0.01
1
10
Forward-Biased Voltage-VCE (V)
100
HSMC Product Specification




 HMBT1015
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Spec. No. : HE6804
Issued Date : 1992.08.25
Revised Date : 2004.08.10
Page No. : 3/4
A
L
3
BS
12
VG
C
D HK
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
J
Marking:
A4
Rank Code
(Y,G,B)
Pb Free Mark
Pb-Free: " " (Note)
Normal: None
Note: Pb-free product can distinguish by the green
label or the extra description on the right side
of the label.
Pin Style: 1.Base 2.Emitter 3.Collector
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 2.80 3.04
B 1.20 1.60
C 0.89 1.30
D 0.30 0.50
G 1.70 2.30
H 0.013 0.10
J 0.085 0.177
K 0.32 0.67
L 0.85 1.15
S 2.10 2.75
V 0.25 0.65
*: Typical, Unit: mm
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMBT1015
HSMC Product Specification




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