HMBT1015

HI-SINCERITY MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2004.08.10 Page No. : 1/4 Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification. Absolute Maximum Ratings SOT-23 Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature..................................................................................................................... 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ..............................................................................................