HMBT1815

HI-SINCERITY MICROELECTRONICS CORP. HMBT1815 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6805 Issued Date : 1992.08.25 Revised Date : 2004.08.13 Page No. : 1/4 Description The HMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification. Absolute Maximum Ratings SOT-23 Maximum Temperatures Storage Temperature........................................................................................................ -55 ~ +150 °C Junction Temperature.................................................................................................. 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................ 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ....................................................................................................... 60 V VCEO Collector to Emitter Voltage .......