HI-SINCERITY
MICROELECTRONICS CORP.
HMBT2369
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6834 Issued Date : 1998.02.0...
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT2369
NPN EPITAXIAL PLANAR
TRANSISTOR
Spec. No. : HE6834 Issued Date : 1998.02.01 Revised Date : 2004.09.07 Page No. : 1/4
Description
The HMBT2369 is designed for general purpose switching and amplifier applications.
Features
Low Collector Saturation Voltage High speed switching
Transistor
SOT-23
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ..............................