HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5086
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6849 Issued Date : 1994.07.2...
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5086
PNP EPITAXIAL PLANAR
TRANSISTOR
Spec. No. : HE6849 Issued Date : 1994.07.29 Revised Date : 2004.09.08 Page No. : 1/4
Description
The HMBT5086 is designed for low noise, high gain, general purpose amplifier applications.
Absolute Maximum Ratings
SOT-23
Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .....................................................................................................