HMBT5089

HI-SINCERITY MICROELECTRONICS CORP. HMBT5089 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6816 Issued Date : 1993.08.26 Revised Date : 2004.09.08 Page No. : 1/4 Description The HMBT5089 is designed for low noise, high gain, general purpose amplifier applications. Absolute Maximum Ratings SOT-23 Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ........................................................................................................