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HMBT5401 Datasheet, Equivalent, PNP Transistor.PNP Transistor PNP Transistor |
| Part | HMBT5401 |
|---|---|
| Description | PNP Transistor |
| Feature | HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5401
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6819 Issued Date : 1993.06.30 Revised Date : 2004.09.07 Page No. : 1/4
Description
The HMBT5401 is designed for general purpose applications requiring high breakdown voltages.
Features
• High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA) • Complements to NPN Type HMBT5551 SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction . |
| Manufacture | Hi-Sincerity Mocroelectronics |
| Datasheet |
| Part | HMBT5401 |
|---|---|
| Description | PNP Transistor |
| Feature | HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5401
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6819 Issued Date : 1993.06.30 Revised Date : 2004.09.07 Page No. : 1/4
Description
The HMBT5401 is designed for general purpose applications requiring high breakdown voltages.
Features
• High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA) • Complements to NPN Type HMBT5551 SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction . |
| Manufacture | Hi-Sincerity Mocroelectronics |
| Datasheet |
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