HMBT5401

HI-SINCERITY MICROELECTRONICS CORP. HMBT5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6819 Issued Date : 1993.06.30 Revised Date : 2004.09.07 Page No. : 1/4 Description The HMBT5401 is designed for general purpose applications requiring high breakdown voltages. Features High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA) Complements to NPN Type HMBT5551 SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to B...