HMBT5551

HI-SINCERITY MICROELECTRONICS CORP. HMBT5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6838 Issued Date : 1994.07.29 Revised Date : 2004.09.07 Page No. : 1/4 Description The HMBT5551 is designed for general purpose applications requiring high Breakdown Voltages. Absolute Maximum Ratings SOT-23 Maximum Temperatures Storage Temperature............................................................................................................................. -55 + 150 °C Junction Temperature................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .....................................................................................................