HMBT6429

HI-SINCERITY MICROELECTRONICS CORP. HMBT6429 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6810 Issued Date : 1998.07.01 Revised Date : 2004.09.08 Page No. : 1/4 Description Amplifier Transistor Absolute Maximum Ratings SOT-23 Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage............................................................................................................................ 55 V VCEO Collector to Emitter Voltage ..........