HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8099
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Amplifier Transistor
Spec. No....
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8099
NPN EPITAXIAL PLANAR
TRANSISTOR
Description
Amplifier
Transistor
Spec. No. : HE6826 Issued Date : 1993.10.27 Revised Date : 2002.10.25 Page No. : 1/3
Absolute Maximum Ratings
SOT-23
Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ......................................................................................... 80 V VCEO Collector to Emitter Voltage...................................................................................... 80 V VEBO Emitter to Base Voltage......................