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NPN Transistor. HMBT8099 Datasheet

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NPN Transistor. HMBT8099 Datasheet






HMBT8099 Transistor. Datasheet pdf. Equivalent




HMBT8099 Transistor. Datasheet pdf. Equivalent





Part

HMBT8099

Description

NPN Transistor



Feature


HI-SINCERITY MICROELECTRONICS CORP. HMBT 8099 NPN EPITAXIAL PLANAR TRANSISTOR De scription Amplifier Transistor Spec. N o. : HE6826 Issued Date : 1993.10.27 Re vised Date : 2002.10.25 Page No. : 1/3 Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperatur e ..................................... ....................................... ............... -55 .
Manufacture

Hi-Sincerity Mocroelectronics

Datasheet
Download HMBT8099 Datasheet


Hi-Sincerity Mocroelectronics HMBT8099

HMBT8099; ~ +150 °C Junction Temperature......... ....................................... .................................... +1 50 °C Maximum • Maximum Power Dissip ation Total Power Dissipation (Ta=25°C ) ..................................... ....................................... ... 225 mW • Maximum Voltages and Cur rents (Ta=25°C) VCBO Collector to Base Voltage ..................


Hi-Sincerity Mocroelectronics HMBT8099

........................................ ................................ 80 V V CEO Collector to Emitter Voltage....... ....................................... ....................................... . 80 V VEBO Emitter to Base Voltage.... ............... .


Hi-Sincerity Mocroelectronics HMBT8099

.

Part

HMBT8099

Description

NPN Transistor



Feature


HI-SINCERITY MICROELECTRONICS CORP. HMBT 8099 NPN EPITAXIAL PLANAR TRANSISTOR De scription Amplifier Transistor Spec. N o. : HE6826 Issued Date : 1993.10.27 Re vised Date : 2002.10.25 Page No. : 1/3 Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperatur e ..................................... ....................................... ............... -55 .
Manufacture

Hi-Sincerity Mocroelectronics

Datasheet
Download HMBT8099 Datasheet




 HMBT8099
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8099
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Amplifier Transistor
Spec. No. : HE6826
Issued Date : 1993.10.27
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
SOT-23
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 80 V
VCEO Collector to Emitter Voltage...................................................................................... 80 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
80
80
6
-
-
-
-
-
600
100
100
75
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
100
400
300
800
300
-
-
-
6
Unit Test Conditions
V IC=100uA
V IC=10mA
V IE=10uA
nA VCB=80V
nA VCE=60V
nA VEB=6V
mV IC=100mA, IB=5mA
mV IC=100mA, IB=10mA
mV VCE=5V, IC=10mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
pF VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HMBT8099
HSMC Product Specification




 HMBT8099
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6826
Issued Date : 1993.10.27
Revised Date : 2002.10.25
Page No. : 2/3
Current Gain & Collector Current
1000
Saturation Voltage & Collector Current
1000
100
10
0.1
1 10 100
Collector Current (mA)
1000
10000
On Voltage & Collector Current
VCE(sat) @ IC=20IB
100
VCE(sat) @ IC=10IB
10
0.1
1 10 100
Collector Current (mA)
1000
Cutoff Frequency & Collector Current
1000
1000
VBE(on) @ VCE=5V
VCE=5V
100
100
0.1
1 10 100
Collector Current (mA)
1000
Capacitance & Reverse-Biased Voltage
100
10
Cob
1
0.1
HMBT8099
1 10
Reverse-Biased Voltage (V)
100
10
1
10 100
Collector Current (mA)
1000
10000
1000
100
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
10
1
1 10 100
Forward Voltage-VCE (V)
HSMC Product Specification




 HMBT8099
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Spec. No. : HE6826
Issued Date : 1993.10.27
Revised Date : 2002.10.25
Page No. : 3/3
A
L
3
BS
12
VG
C
Marking:
KB
Rank Code
Control Code
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
D H KJ
Style: Pin 1.Base 2.Emitter 3.Collector
DIM
Inches
Min. Max.
Millimeters
Min. Max.
A 0.1102 0.1204 2.80
3.04
B 0.0472 0.0630 1.20
1.60
C 0.0335 0.0512 0.89
1.30
D 0.0118 0.0197 0.30
0.50
G 0.0669 0.0910 1.70
2.30
H 0.0005 0.0040 0.013
0.10
*: Typical
DIM
Inches
Min. Max.
Millimeters
Min. Max.
J 0.0034 0.0070 0.085 0.177
K 0.0128 0.0266 0.32
0.67
L 0.0335 0.0453 0.85
1.15
S 0.0830 0.1083 2.10
2.75
V 0.0098 0.0256 0.25
0.65
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMBT8099
HSMC Product Specification



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