HMBTA94

HI-SINCERITY MICROELECTRONICS CORP. HMBTA94 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HN200209 Issued Date : 2000.11.01 Revised Date : 2004.08.17 Page No. : 1/4 Description The HMBTA94 is designed for application that requires high voltage. Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to HMBTA44 SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 350 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ..................................