HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA94
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HN200209 Issued Date : 2000.11....
HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA94
PNP EPITAXIAL PLANAR
TRANSISTOR
Spec. No. : HN200209 Issued Date : 2000.11.01 Revised Date : 2004.08.17 Page No. : 1/4
Description
The HMBTA94 is designed for application that requires high voltage.
Features
High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to HMBTA44
SOT-23
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 350 mW
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ..................................