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MMIC AMPLIFIER. HMC283LM1 Datasheet

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MMIC AMPLIFIER. HMC283LM1 Datasheet
















HMC283LM1 AMPLIFIER. Datasheet pdf. Equivalent













Part

HMC283LM1

Description

SMT MEDIUM POWER GaAs MMIC AMPLIFIER



Feature


v04.1201 MICROWAVE CORPORATION HMC283LM 1 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz Features SMT mmWave Packag e Psat Output Power: +21 dBm High Gain: 21 dB No External Matching Required 8 AMPLIFIERS - SMT Typical Applications The HMC283LM1 is ideal for: • Millim eterwave Point-to-Point Radios • LMDS • SATCOM Functional Diagram Genera l Description The HMC283.
Manufacture

Hittite Microwave Corporation

Datasheet
Download HMC283LM1 Datasheet


Hittite Microwave Corporation HMC283LM1

HMC283LM1; LM1 is a Medium Power Amplifier (MPA) i n a SMT leadless chip carrier package c overing 17 to 40 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match preserving MMIC chip performa nce. Utilizing a GaAs PHEMT process, th e device offers 20 dB gain and +21 dBm ouput power from a bias supply of +3.5V @ 300mA. As an alte.


Hittite Microwave Corporation HMC283LM1

rnative to chip-and-wire hybrid assembli es the HMC283LM1 eliminates the need fo r wirebonding, thereby providing a cons istent connection interface for the cus tomer. The amplifier may be used as a frequency doubler. A built-in-test pad (Vdet) allows monitoring of microwave o utput power. All data is with the non-h ermetic, epoxy sealed LM1 packaged MPA device mounted in a .


Hittite Microwave Corporation HMC283LM1

50 ohm test fixture. Electrical Speci cations, TA = +25° C, Vdd= +3.5V*, l dd = 300 mA Parameter Frequency Range G ain Gain Variation over Temperature Inp ut Return Loss Output Return Loss Rever se Isolation Output Power for 1 dB Comp ression (P1dB) Saturated Output Power ( Psat) Output Third Order Intercept (IP3 ) Noise Figure Supply Current (Idd) 6 4 30 14 17 22 15 Min. Ty.





Part

HMC283LM1

Description

SMT MEDIUM POWER GaAs MMIC AMPLIFIER



Feature


v04.1201 MICROWAVE CORPORATION HMC283LM 1 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz Features SMT mmWave Packag e Psat Output Power: +21 dBm High Gain: 21 dB No External Matching Required 8 AMPLIFIERS - SMT Typical Applications The HMC283LM1 is ideal for: • Millim eterwave Point-to-Point Radios • LMDS • SATCOM Functional Diagram Genera l Description The HMC283.
Manufacture

Hittite Microwave Corporation

Datasheet
Download HMC283LM1 Datasheet




 HMC283LM1
v04.1201
MICROWAVE CORPORATION
HMC283LM1
SMT MEDIUM POWER GaAs MMIC
AMPLIFIER, 17 - 40 GHz
8 Typical Applications
The HMC283LM1 is ideal for:
• Millimeterwave Point-to-Point Radios
• LMDS
• SATCOM
Functional Diagram
Features
SMT mmWave Package
Psat Output Power: +21 dBm
High Gain: 21 dB
No External Matching Required
General Description
The HMC283LM1 is a Medium Power Amplifier (MPA)
in a SMT leadless chip carrier package covering 17 to
40 GHz. The LM1 is a true surface mount broadband
millimeterwave package offering low loss & excellent
I/O match preserving MMIC chip performance. Utilizing
a GaAs PHEMT process, the device offers 20 dB gain
and +21 dBm ouput power from a bias supply of +3.5V
@ 300mA. As an alternative to chip-and-wire hybrid
assemblies the HMC283LM1 eliminates the need for
wirebonding, thereby providing a consistent connec-
tion interface for the customer. The amplifier may be
used as a frequency doubler. A built-in-test pad (Vdet)
allows monitoring of microwave output power. All data
is with the non-hermetic, epoxy sealed LM1 packaged
MPA device mounted in a 50 ohm test fixture.
8 - 14
Electrical Specifications, TA = +25° C, Vdd= +3.5V*, ldd = 300 mA
Parameter
Min.
Typ.
Max.
Min.
Typ.
Frequency Range
17 - 40
21 - 30
Gain
15 20
17 22
Gain Variation over Temperature
0.05
0.07
0.05
Input Return Loss
6 10
6 12
Output Return Loss
47
48
Reverse Isolation
30 40
35 45
Output Power for 1 dB Compression (P1dB)
14 18
14 18
Saturated Output Power (Psat)
17 21
17 21
Output Third Order Intercept (IP3)
22 27
21 27
Noise Figure
10 10
Supply Current (Idd)
300 330
300
*Vdd = +3.5V, adjust Vgg = Vgg1, Vgg2 between -2.0 to +0.4V to achieve Idd = 300 mA typical.
Max.
0.07
330
Units
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com




 HMC283LM1
v04.1201
MICROWAVE CORPORATION
HMC283LM1
SMT MEDIUM POWER GaAs MMIC
AMPLIFIER, 17 - 40 GHz
Broadband Gain & Return Loss
30
25
20
15
10
S11
S21
5 S22
0
-5
-10
-15
-20
-25
10 15 20 25 30 35 40
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
+25C
+85C
-40C
-20
-30
-40
-50
-60
16 18 20 22 24 26 28 30 32 34 36 38 40 42
FREQUENCY (GHz)
P1dB and Psat @ 25 °C
25
23
Psat
21
19
17
P1dB
15
13
16 18 20 22 24 26 28 30 32 34 36 38 40
FREQUENCY (GHz)
Gain vs. Temperature
30
25
20
15
10 +25C
+85C
-40C
5
0
16 18 20 22 24 26 28 30 32 34 36 38 40 42
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
-10
-15
-20
+25C
+85C
-40C
-25
16 18 20 22 24 26 28 30 32 34 36 38 40 42
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
-5
-10
+25C
-15 +85C
-40C
-20
16 18 20 22 24 26 28 30 32 34 36 38 40 42
FREQUENCY (GHz)
8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 15




 HMC283LM1
v04.1201
MICROWAVE CORPORATION
HMC283LM1
SMT MEDIUM POWER GaAs MMIC
AMPLIFIER, 17 - 40 GHz
8
P1dB vs. Temperature
25
23
-40 C
+25 C
21
19
17
15
+85C
13
16 18 20 22 24 26 28 30 32 34 36 38 40
FREQUENCY (GHz)
Power Compression @ 20 GHz
24
22
20
18
16
14
12
10
8
6
4
2
0
-10
-8
Gain
Pout
PAE
-6 -4 -2 0 2 4
INPUT POWER (dBm)
6
8 10
Psat vs. Temperature
25
-40 C
23
+25 C
21
19
17
+85C
15
13
16 18 20 22 24 26 28 30 32 34 36 38 40
FREQUENCY (GHz)
Power Compression @ 28 GHz
24
22
20
18
16
14
12
10
8
6
4
2
0
-10
-8
Gain
Pout
PAE
-6 -4 -2 0 2 4
INPUT POWER (dBm)
6
8 10
Output IP3 vs. Temperature
Frequency (GHz)
Temperature
20
28
-40 °C
29.0
28.0
+25 °C
28.5
27.5
+85 °C
27.5
26.0
All levels in dBm
38
31.0
28.5
24.5
Power Compression @ 39 GHz
24
22
20
18
16
14
12
10
8
6
4
2
0
-10
-8
Gain
Pout
PAE
-6 -4 -2 0 2 4
INPUT POWER (dBm)
6
8 10
8 - 16
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com




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