HMC314

MICROWAVE CORPORATION v02.0802 HMC314 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz Features P1dB Output Power: +18 dBm Output IP3: +29 dBm Gain: 12 dB Single Supply: 5V Ultra Small Package: SOT26 8 AMPLIFIERS - SMT Typical Applications Ideal Broadband Gain Stage for: 2.2 - 2.7 GHz MMDS 3.5 GHz Wireless Local Loop Low Profile Portable Wireless Devices WLAN Systems Functional Diagram General Description The HMC314 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that operates from a single positive supply. This amplifier also incorporates a power down feature. When the “Vpd” pin is held low, the amplifier will shut down. The surface mount SOT26 amplifier can be used as a broadband gain stage for wideband applications. The amplifier provides 12 dB of gain and +22 dBm of saturated power while operating from a single positive +5v supply. The HMC314 is packaged in an ultra small SOT26 package at a height of only 1.45mm. Electrical Specifications, TA = +25° C Vs = +5V, Rbias = 10 Ohm Parameter Min. Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) @ 1 GHz Saturated Output Power (Psat) @ 1 GHz Output Third Order Intercept (IP3) @ 1 GHz Switching Speed Supply Current (Icc) Control Voltage (Vpd) Control Current (Ipd) On/Off 6 2 22 15 19 26 7 Typ. 0.7 - 4.0 12 0.015 12 6 30 18 22 29 60 150 0/5 .001/12 16 0.025 Max. GHz dB dB/°C dB dB dB dBm dBm dBm ns m...