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HMC315

Hittite Microwave Corporation

GaAs InGaP HBT MMIC

MICROWAVE CORPORATION v01.0701 HMC315 Features Saturated Output Power: +17 dBm Output IP3: +33 dBm Gain: 15 dB Single ...


Hittite Microwave Corporation

HMC315

File Download Download HMC315 Datasheet


Description
MICROWAVE CORPORATION v01.0701 HMC315 Features Saturated Output Power: +17 dBm Output IP3: +33 dBm Gain: 15 dB Single Supply: +5V to +7V Ultra Small Package: SOT26 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz 8 AMPLIFIERS - SMT Typical Applications The HMC315 is ideal for: Fiber Optic OC-48 Systems Microwave Test Instrumentation Broadband Mobile Radio Platforms Functional Diagram General Description The HMC315 is an ultra broadband GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that operates from a single positive supply. The surface mount SOT26 amplifier can be used as a broadband gain stage, or used with external matching for optimized narrow band applications. The Darlington configuration results in reduced sensitivity to normal process variations and provides a good 50-ohm input/output port match. The amplifier provides 15 dB of gain and +17 dBm of saturated power while operating from a single positive +7V supply. Electrical Specifications, TA = +25° C, As a Function of Vcc Vcc = +5V Parameter Min. Frequency Range Gain Gain Variation over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) @ 1.0 GHz Saturated Output Power (Psat) @ 1.0 GHz Output Third Order Intercept (OIP3) @ 1.0 GHz Noise Figure Supply Current (Icc) 7 3 18 8 10 23 11 Typ. DC - 7 14 0.015 10 7 21 11 13 26 6.5 30 17 0.025 7 3 18 13 15 30 11 Max. Min. Typ. DC - 7 15 0.015 10 7 21 16 17.5 33 6.5 50 18 0.025 Max. GHz...




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