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NON-REFLECTIVE SWITCH. HMC349LP4C Datasheet |
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v00.0304
MICROWAVE CORPORATION
HMC349LP4C
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 4.0 GHz
14
Typical Applications
The HMC349LP4C is ideal for:
• Basestation Infrastructure
• MMDS & 3.5 GHz WLL
• CATV/CMTS
• Test Instrumentation
Functional Diagram
Features
High Isolation: 67 dB @ 1 GHz
62 dB @ 2 GHz
Single Positive Control: 0/+5V
+52 dBm Input IP3
Non-Reflective Design
All Off State
16 mm2 Leadless QFN SMT Package
General Description
The HMC349LP4C is a high isolation non-
reflective DC to 4 GHz GaAs MESFET SPDT
switch in a low cost leadless surface mount
package. The switch is ideal for cellular/PCS/3G
basestation applications yielding 60 to 65 dB
isolation, low 0.9 dB insertion loss and +52 dBm
input IP3. Power handling is excellent up through
the 3.5 GHz WLL band with the switch offering a
P1dB compression point of +31 dBm. On-chip
circuitry allows a single positive voltage control
of 0/+5 Volts at very low DC currents. An enable
input (EN) set to logic high will put the switch in
an “all off” state.
Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.9 1.2 dB
1.0 1.3 dB
1.2 1.5 dB
1.4 1.7 dB
Isolation (RFC to RF1/RF2)
DC - 1.0 GHz
DC - 4.0 GHz
60 67
55 62
dB
dB
Return Loss (On State)
Return Loss (Off State)
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.5 - 4.0 GHz
0.25 - 4.0 GHz
0.25 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
20
15
13
15
27 31
52
50
49
46
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
Switching Speed
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
50 ns
120 ns
14 - 224
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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MICROWAVE CORPORATION
v00.0304
HMC349LP4C
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 4.0 GHz
InseGrtiaoAn sLoMssMIC SUB-HARMONICALLY RPeUtuMrnPLEoDssMIXER 17 - 25 GHz
00
-1
-2
-3
+25C
+85C
-40C
-4
-5
RFC
RF1, RF2 ON
RF1, RF2 OFF
-10
-15
-20
-25
-5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
Isolation Between
Ports RFC and RF1 / RF2
0
-10 RF1
RF2
-20 ALL OFF
-30
-40
-50
-60
-70
-80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
-30
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
Note: RFC is reflective in “all off” state.
Isolation Between Ports RF1 and RF2
0
-10
-20
RFC-RF1 ON
RFC-RF2 ON
-30
-40
-50
-60
-70
-80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
14
0.1 and 1 dB Input Compression Point
34
32
30
28
26
0.1 dB Compression Point
24 1 dB Compression Point
22
20
0
123
FREQUENCY (GHz)
4
Input Third Order Intercept Point
60
58
56
54
52
50
48
46
44
42
40
0
+25C
+85C
-40C
123
FREQUENCY (GHz)
4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14 - 225
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MICROWAVE CORPORATION
v00.0304
HMC349LP4C
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 4.0 GHz
14
Absolute Maximum Ratings
RF Input Power (Vctl = 0V/+5V)
(0.25 - 4 GHz)
Supply Voltage Range (Vdd)
Control Voltage Range (Vctl)
Hot Switch Power Level
(Vdd = +5V)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 12 mW/°C above 85 °C)
Thermal Resistance
Storage Temperature
Operating Temperature
+30 dBm (T = +85 °C)
+7 Vdc
-1V to Vdd +1V
+30 dBm
150 °C
0.75 W
87 °C/W
-65 to +150 °C
-40 to +85 °C
Note: DC blocking capacitors are required at ports RFC,
RF1 and RF2. Their value will determine the lowest trans-
mission frequency.
Outline Drawing
TTL/CMOS Control Voltages
State
Low
High
Bias Condition
0 to +0.8 Vdc @ <1 µA Typical
+2.0 to +5.0 Vdc @ 30 µA Typical
Truth Table
Control Input
Vctl EN
Low Low
High
Low
Low High
High
High
Signal Path State
RFC - RF1
RFC - RF2
OFF
ON
ON OFF
OFF
OFF
OFF
OFF
Bias Voltage & Current
Vdd
(Vdc)
+5.0
Vdd Range = +5.0 Vdc ± 10%
Idd (Typ.)
(mA)
Idd (Max.)
(mA)
2.3 5.0
14 - 226
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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