HMC349MS8G

v00.0304 MICROWAVE CORPORATION HMC349MS8G Features High Isolation: 70 dB @ 1 GHz 57 dB @ 2 GHz Single Positive Control: 0/+5V +52 dBm Input IP3 Non-Reflective Design All Off State HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz Typical Applications The HMC349MS8G is ideal for: Basestation Infrastructure MMDS & 3.5 GHz WLL CATV/CMTS Test Instrumentation Functional Diagram Ultra Small MS8G SMT Package: 14.8 mm2 General Description The HMC349MS8G is a high isolation nonreflective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with an exposed ground paddle. The switch is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+5 Volts at very low DC currents. An enable input (EN) set to logic high will put the switch in an “all off” state. 14 SWITCHES - SMT Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System Parameter Frequency DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz DC - 4.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz DC - 4.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz DC - 4.0 GHz 0.5 - 2.0 GHz 0.5 - 3.0 GHz 0.5 - 4.0 GHz 0.25 - 4.0 GHz 0.25 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz DC - 4.0 GHz tRISE, tFALL (10/90% RF) tO...