CY6264 | Cypress Semiconductor
8K x 8 Static RAM
1CY 626 4
PRELIMINARY
CY6264
8K x 8 Static RAM
Features
• 55, 70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CE1, CE2, and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected over 70% when deselected. The CY6264 is packaged in a 450-mil (300-mil body) SOIC. An active LOW write enable signal (WE) controls the writing/reading oper.
- CY6264 | Cypress Semiconductor
- 8K x 8 Static RAM
- 1CY 626 4
PRELIMINARY
CY6264
8K x 8 Static RAM
Features
• 55, 70 ns access times • CMOS for optim.
- 1CY 626 4
PRELIMINARY
CY6264
8K x 8 Static RAM
Features
• 55, 70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CE1, CE2, and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected over 70% when deselected. The CY6264 is packaged in a 450-mil (300-mil body) SOIC. An active LOW write enable signal (WE) controls the writing/reading operation of the memory. When CE1 and WE inputs are bo.
