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BA792 Dataheets PDF



Part Number BA792
Manufacturers NXP
Logo NXP
Description Band-switching diode
Datasheet BA792 DatasheetBA792 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage L8 M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF • Low diode forward resistance: max. 0.7 Ω. APPLICATIONS • Low loss band-switching in VHF television tuners • Surface mount high-speed switching circuits. Marking code: L8. bottom view side view top view handbook, 4 columns BA792 cathode m.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage L8 M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF • Low diode forward resistance: max. 0.7 Ω. APPLICATIONS • Low loss band-switching in VHF television tuners • Surface mount high-speed switching circuits. Marking code: L8. bottom view side view top view handbook, 4 columns BA792 cathode mark k k a a MAM139 DESCRIPTION Planar, high performance band-switching diode in a small ceramic SOD110 SMD package. Fig.1 Simplified outline (SOD110) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature junction temperature − − −65 − MIN. 35 100 +150 150 MAX. V mA °C °C UNIT 1996 Mar 13 2 Philips Semiconductors Product specification Band-switching diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd rD Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm. MOUNTING Reflow soldering Follow standard reflow soldering techniques to ensure correct application of solder paste and placement of the SOD110 package (see Fig.2). Wave soldering PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 315 PARAMETER forward voltage reverse current diode capacitance diode forward resistance IF = 100 mA VR = 20 V VR = 20 V; Tamb = 75 °C VR = 3 V; f = 1 to 100 MHz; note 1 IF = 3 mA; f = 200 MHz; note 1 CONDITIONS 10 1 1.1 0.7 MAX. 1.1 BA792 UNIT V nA µA pF Ω UNIT K/W Before wave soldering, attach SOD110 packages to the printed-circuit boards using a small dot of thermo-setting epoxy or UV-curing adhesive centred between the soldering lands (see Fig.3). handbook, halfpage ,, ,,, ,,,,, 3.00 1.00 1.00 handbook, halfpage 1.25 MGC119 ,, ,,, ,, ,,, 3.40 1.10 1.10 1.25 MGC126 Dimensions in mm. Dimensions in mm. Fig.2 SOD110 reflow soldering pattern. Fig.3 SOD110 wave soldering pattern. 1996 Mar 13 3 Philips Semiconductors Product specification Band-switching diode PACKAGE OUTLINE BA792 handbook, full pagewidth cathode mark 2.10 1.90 1.6 max MSA323 - 1 1.40 1.10 0.1 Dimensions in mm. Marking band indicates the cathode. Fig.4 SOD110. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Mar 13 4 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Philips Semiconductors Product specification Band-switching diode NOTES BA792 1996 Mar 13 5 Philips Semiconductors Product specification Band-switching diode NOTES BA792 1996 Mar 13 6 Philips Semiconductors Product specification Band-switching diode NOTES BA792 1996 Mar 13 7 Philips Semiconductors – a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40-2783749, Fax. (31)40-2788399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SÃO PAULO-SP, Brazil, P.O. Box 7383 (01064-970), Tel. (011)821-2333, Fax. (011)829-1849 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. (02)777 6730 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. (852)2319 7888, Fax. (852)2319 7700 Col.


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