BA886

BA 886 Silicon PIN Diode Preliminary Data q q q BA 886 Current-controlled RF resistor for switching and attenuating applications Frequency range above 1 MHz Designed for low IM distortion Type BA 886 Marking PC Ordering Code (tape and reel) Q62702-A932 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient2) Rth JA ≤ Symbol VR IF Top Tstg Values 50 50 – 55 … + 150 Unit V mA – 55 … + 125 ˚C 450 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. BA 886 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Forward voltage IF = 50 mA Reverse current VR = 50 V Diode capacitance f = 1 MHz, VR = 50 V f= 100 MHz, VR = 0 V Forward resistance f = 100 MHz IF = 10 µA IF = 1 mA IF = 10 mA Zero bias conductance f = 100 MHz, VR = 0 V Series inductance Symbol min. VF IR CT – – rf – – 6.5 gp LS – – 2400 58 7.8 40 2 – – 10 – – µS Values typ. – – max. 1.15 50 – – Unit V nA pF 0.23 0.2 0.35 – Ω nH Diode capacitance CT = f (VR) f = 1 MHz / f = 100 MHz Forward resistance rf = f (IF) f = 100 MHz ...