BA887

Silicon PIN Diode Preliminary Data q q BA 887 RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion Type Ordering Code (taped) Q62702- Pin Configuration Marking 1 2 3 A C PDs Package BA 887 SOT-23 Maximum Ratings Parameter Reverse voltage Forward current Total power dissipation TS ≤ 40 °C1) Junction temperature Storage temperature range Thermal Resistance Junction-soldering point1) Junction-ambient Symbol Values 50 100 250 150 – 55 … + 150 Unit V mA mW °C °C VR IF Ptot Tj Tstg Rth JS Rth JA ≤ 220 ≤ 300 K/W K/W 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10 94 BA 887 Characteristics per Diode at TA = 25 °C, unless otherwise specified. Parameter Symbol min. Reverse current VR = 30 V Forward voltage IF = 100 mA Diode capacitance VR = 10 V, f = 1 MHz VR = 0 V, f = 100 MHz Value typ. – 0.9 0.52 0.27 22 4.2 2.5 max. nA – 20 V – – pF – – – – – – – Ω – – µs – Unit IR VF CT Forward resistance f = 100 MHz rf IF = 1.5 mA IF = 10 mA τL Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Package Outline SOT-23 Semiconductor Group 2 BA 887 Diode capacitance CT = f (VR) f = 1 MHz, 100 MHz Forward resistance rt = (IF), f = 100 MHz 3rd Harmonic intercept point vs forward current f = 100 MHz Semiconductor Group 3 ...