BA892

DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BA892 Band-switching diode Preliminary specification File under Discrete Semiconductors, SC01 1998 May 08 Philips Semiconductors Preliminary specification Band-switching diode FEATURES Small plastic SMD package Low diode capacitance Low diode forward resistance Small inductance. APPLICATIONS Low loss band-switching in VHF television tuners Surface mount band-switching circuits. DESCRIPTION Planar, high performance band-switch diode in a small SMD plastic package (SOD523). PINNING SOD523 PIN 1 2 BA892 halfpage Marking code: 5. 
1 Top view DESCRIPTION cathode anode 2 MBK124 Fig.1 Simplified outline. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature TS = 90 °C CONDITIONS. − − − −65 −65 MIN. MAX. 35 100 715 +150 +150 UNIT V mA mW °C °C 1998 May 08 2 Philips Semiconductors Preliminary specification Band-switching diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd rD LS Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS VALUE 85 PARAMETER forward voltage reverse current diode capacitance diode forward resistance series inductance CONDITIONS IF = 10 mA VR = 30 V VR = 1 V...