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BA892

Infineon Technologies AG

Silicon RF Switching Diode

Silicon RF Switching Diode • For band switching in TV/VTR tuners and mobile applications • Very low forward resistance (...


Infineon Technologies AG

BA892

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Description
Silicon RF Switching Diode For band switching in TV/VTR tuners and mobile applications Very low forward resistance (typ. 0.45 Ω @ 3 mA) Small capacitance Pb-free (RoHS compliant) package Qualified according AEC Q101 BA592/BA892... BA592 BA892/-02L BA892-02V  Type BA592 BA892 BA892-02L BA892-02V Package SOD323 SCD80 TSLP-2-1 SC79 Configuration single single single, leadless single Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Junction temperature Operating temperature range Storage temperature VR IF TJ Top TStg LS(nH) 1.8 0.6 0.4 0.6 Marking blue S AA AA A Value 35 100 150 -55 ... 125 -55 ... 150 Unit V mA °C 1 2011-07-21 BA592/BA892... Thermal Resistance Parameter Junction - soldering point1) BA592 BA892, BA892-02V BA892-02L Symbol RthJS Value ≤ 135 ≤ 120 ≤ 70 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA IR - - 20 VF - - 1 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit nA V 2 2011-07-21 BA592/BA892... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values AC Characteristics min. typ. max. Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 0 V, f = 100 MHz CT 0.65 0.92 1.4 0.6 0.85 1.1 - 1- Reverse parallel resistance VR = 0 V, f = 100 ...




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