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BA892V-02V Dataheets PDF



Part Number BA892V-02V
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Band Switching Diodes
Datasheet BA892V-02V DatasheetBA892V-02V Datasheet (PDF)

VISHAY BA892V-02V Vishay Semiconductors Band Switching Diodes Mechanical Data Case: Plastic case (SOD 523) Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description The main purpose of the BA892V-02V is the Band Switching. Biased with a DC forward current for signals at frequencies over 100 MHz up to 3 GHz this diode behaves like a current controlled resistor and not as a diode any more. Depending on the forward curren.

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VISHAY BA892V-02V Vishay Semiconductors Band Switching Diodes Mechanical Data Case: Plastic case (SOD 523) Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description The main purpose of the BA892V-02V is the Band Switching. Biased with a DC forward current for signals at frequencies over 100 MHz up to 3 GHz this diode behaves like a current controlled resistor and not as a diode any more. Depending on the forward current the forward resistance rf can be switched far below 1 Ω, so that the Switch is closed. To open the Switch, the BA892V02V has to be driven in the reverse mode where the BA892V-02V behaves like a small capacitor with high isolation. So typical applications for this Band Switching Diode are mobile and TV-applications. C 16863 Features • Low forward resistance • Small, space saving SOD523 package with low series inductance • Small capacitance Applications • Band switching up to 3 GHz • Low loss band-switching in TV/VTR tuners Parts Table Part BA892V-02V Ordering code BA892V-02V-GS08 A Marking Remarks Tape and Reel Package SOD523 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test condition Sub type Symbol VR IF Tj Tstg Value 35 100 150 -55 to +150 Unit V mA °C °C Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Junction soldering point Test condition Symbol RthJS Value 100 Unit K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Test condition IR = 10 µA Sub type Symbol VR Min 35 Typ. Max Unit V Document Number 85640 Rev. 1, 26-Sep-02 www.vishay.com 1 BA892V-02V Vishay Semiconductors Parameter Reverse current Forward voltage Diode capacitance VR = 20 V IF = 100 mA f = 1 MHz, V R = 0 f = 1 MHz, V R = 1 V f = 1 MHz, V R = 3 V Forward resistance f = 100 MHz, IF = 1 mA f = 100 MHz, IF = 3 mA f = 100 MHz, IF = 10 mA Charge carrier life time IF = 10 mA, IR = 6 mA, iR = 3 mA Test condition Sub type Symbol IR VF CD CD CD rf rf rf trr 1.1 0.9 0.82 0.7 0.5 0.38 100 Min Typ. VISHAY Max 20 1.1 1.2 1.1 0.7 0.5 Unit nA V pF pF pF Ω Ω Ω ns Characteristics (Tamb = 25°C unless otherwise specified) 10.0 rf – Forward Resistance ( W ) f = 100 MHz 1.0 0.1 0.10 16862 1.00 IF – Forward Current ( mA ) 10.00 Figure 1. Forward Resistance vs. Forward Current 1.2 CD – Diode Capacitance ( pF ) 1.0 f = 1 MHz 0.8 0.6 0.4 0.2 0.0 0 5 10 15 20 25 30 16859 VR – Reverse Voltage (V) Figure 2. Diode Capacitance vs. Reverse Voltage Document Number 85640 Rev. 1, 26-Sep-02 www.vishay.com 2 VISHAY Package Dimensions in mm or Inches (mm) BA892V-02V Vishay Semiconductors ISO Method E 16864 Document Number 85640 Rev. 1, 26-Sep-02 www.vishay.com 3 BA892V-02V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D.


BA892-02V BA892V-02V BA892V-02V-GS08


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