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BAL99W

NXP

High-speed diode

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAL99W High-speed diode Product specification Supersedes data...


NXP

BAL99W

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Description
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAL99W High-speed diode Product specification Supersedes data of 1996 Sep 10 1999 May 06 Philips Semiconductors Product specification High-speed diode FEATURES Very small plastic SMD envelope High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. APPLICATIONS High-speed switching in e.g. surface mounted circuits. 3 Top view Marking code: JF. BAL99W DESCRIPTION The BAL99W is a high-speed switching diode fabricated in planar technology, and encapsulated in the very small plastic SMD SOT323 package. PINNING PIN 1 2 3 DESCRIPTION not connected cathode anode 2 1 2 1 n.c. 3 MAM080 Fig.1 Simplified outline (SOT323; SC-70) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.5 200 +150 150 A A A mW °C °C see Fig.2; note 1 CONDITIONS − − − − MIN. MAX. 85 75 150 500 V V mA mA UNIT 1999 May 06 2 Philips Semiconductors Product spec...




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