BAP64-04W

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP64-04W Silicon PIN diode Preliminary specification 1999 Dec 17 Philips Semiconductors Preliminary specification Silicon PIN diode FEATURES High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Low series inductance For applications up to 3 GHz. APPLICATIONS RF attenuators and switches. DESCRIPTION Two planar PIN diodes in series configuration in a SOT323 small plastic SMD package. 1 2 handbook, halfpage BAP64-04W PINNING PIN 1 2 3 DESCRIPTION anode cathode common connection 3 3 2 1 MAM434 Marking code: 4W- Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF Ptot Tstg Tj continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C − − − −65 −65 100 100 250 +150 +150 V mA mW °C °C PARAMETER CONDITIONS MIN. MAX. UNIT 1999 Dec 17 2 Philips Semiconductors Preliminary specification Silicon PIN diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF IR Cd forward voltage reverse current diode capacitance IF = 50 mA VR = 100 V VR = 20 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 20 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 IF = ...