BAR16-1

Silicon PIN Diode RF switch, RF attenuator for frequencies above 10 MHz Low distortion faktor Long-term stability of electrical characteristics Pb-free (RoHS compliant) package Qualified according AEC Q101 BAR1.../BAR61... BAR14-1 BAR15-1 BAR16-1 BAR61 ! , ,  ! , ,  ! , ,  "! , ,! ,  Type BAR14-1 BAR15-1 BAR16-1 BAR61 Package SOT23 SOT23 SOT23 SOT143 Configuration series common cathode common anode PI element LS(nH) 1.8 1.8 1.8 2 Marking L7s L8s L9s 61s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Total power dissipation TS ≤ 65°C Junction temperature Operating temperature range Storage temperature VR IF Ptot Tj Top Tstg Value 100 140 250 150 -55 ... 125 -55 ... 150 Unit V mA mW °C Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value ≤ 340 Unit K/W 1 2007-04-19 BAR1.../BAR61... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 50 V VR = 100 V Forward voltage IF = 100 mA IR nA - - 100 - - 1000 VF - 1.05 1.25 V AC Characteristics Diode capacitance VR = 0 V, f = 100 MHz VR = 50 V, f = 1 MHz Zero bias conductance VR = 0 V, f = 100 MHz Forward resistance IF = 0.01 mA, f = 100 MHz IF = 0.1 mA, f = 100 MHz IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz CT pF...