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BAR63-03 Dataheets PDF



Part Number BAR63-03
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Datasheet BAR63-03 DatasheetBAR63-03 Datasheet (PDF)

BAR 63-03W Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63-03W Marking G Ordering Code (tape and reel) Q62702-A1025 Pin Configuration Package 1 2 A C SOD-323 1) Maximum Ratings Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 111°C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient 1) Symbol BAR 63-03W 50 100 250 -55 +150.

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BAR 63-03W Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63-03W Marking G Ordering Code (tape and reel) Q62702-A1025 Pin Configuration Package 1 2 A C SOD-323 1) Maximum Ratings Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 111°C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient 1) Symbol BAR 63-03W 50 100 250 -55 +150°C -55...+150°C Unit V mA mW °C °C VR IF Ptot Top Tstg Junction-soldering point Rth JA Rth JS ≤ 235 ≤ 155 K/W K/W _________________________ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 22.07.94 BAR 63-03W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC Characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance V(BR) 50 0.95 0.3 0.21 1.2 1 75 2.0 - V nA 50 V 1.2 pF pF 0.3 Ω 2 ns nH - IR VF CT CT rf τL Ls Semiconductor Group 2 Edition A01, 22.07.94 BAR 63-03W Diode capacitance CT = f (VR) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz Forward current IF = f (TA*TS) mA T IF S S T A T T A S Semiconductor Group 3 Edition A01, 22.07.94 BAR 63-03W Permissible load RthJS = f (tp) K/W Permissible load IFmax / IFDC = f (tp) IF max _______ I DC F R thJS tp tp Semiconductor Group 4 Edition A01, 22.07.94 .


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