Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63 ... W
Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low cap...
Description
BAR 63 ... W
Silicon PIN Diode PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz
3
2 1
VSO05561
BAR 63-04W
BAR 63-05W
BAR 63-06W
Type BAR 63-04W BAR 63-05W BAR 63-06W
Marking Ordering Code G4s G5s G6s Q62702-A1261 Q62702-A1267 Q62702-A1268
Pin Configuration 1 = A1 1 = A1 1 = C1 2 = C2 2 = A2 2 = C2 3 = C1/2 3 = A1/2
Package 3=C1/A2 SOT-323
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S ≤ 105 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient
1)
Symbol
Value 50 100 250 150 - 55 ...+150 - 55 ...+150
Unit V mA mW °C
VR IF Ptot Tj Top Tstg
RthJA RthJS
≤ 340 ≤ 180
K/W
Junction - soldering point
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11
Sep-07-1998 1998-11-01
BAR 63 ... W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. 0.95 max. 50 1.2
Unit
V(BR) IR VF
50 -
V µA mV
I (BR) = 5 µA
Reverse current
VR = 20 V
Forward voltage
I F = 100 mA
AC characteristics Diode capacitance
CT
0.3 0.21 1.2 1 75 1.4 0.3
pF
VR = 0 V, f = 100 MHz VR = 5 V, f = 1 MHz
Forward resistance
rf
τrr 2 -
Ω
I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz
Charge carrier life time
µs nH
I F = 10 mA, I R = 6 mA, I R = 3 mA
Series inductance
Ls
Semiconductor ...
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