BAR63-06W GHz Datasheet

BAR63-06W Datasheet, PDF, Equivalent


Part Number

BAR63-06W

Description

Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Manufacture

Siemens Semiconductor Group

Total Page 4 Pages
Datasheet
Download BAR63-06W Datasheet


BAR63-06W
Silicon PIN Diode
PIN diode for high speed
switching of RF signal
Low forward resistance
Very low capacitance
For frequencies up to 3 GHz
BAR 63-04W BAR 63-05W
BAR 63-06W
BAR 63 ... W
3
2
1
VSO05561
Type
BAR 63-04W
BAR 63-05W
BAR 63-06W
Marking Ordering Code
G4s Q62702-A1261
G5s Q62702-A1267
G6s Q62702-A1268
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation, TS 105 °C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Junction - ambient 1)
Junction - soldering point
Pin Configuration
Package
1 = A1 2 = C2 3=C1/A2 SOT-323
1 = A1 2 = A2 3 = C1/2
1 = C1 2 = C2 3 = A1/2
Symbol
VR
IF
Ptot
Tj
Top
Tstg
RthJA
RthJS
Value
50
100
250
150
- 55 ...+150
- 55 ...+150
Unit
V
mA
mW
°C
340
180
K/W
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109798-1-1919-081

BAR63-06W
BAR 63 ... W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Breakdown voltage
I(BR) = 5 µA
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
V(BR)
IR
VF
50 -
-V
- - 50 µA
- 0.95 1.2 mV
AC characteristics
Diode capacitance
VR = 0 V, f = 100 MHz
VR = 5 V, f = 1 MHz
CT pF
- 0.3 -
- 0.21 0.3
Forward resistance
IF = 5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
- 1.2 2
- 1-
Charge carrier life time
IF = 10 mA, IR = 6 mA, IR = 3 mA
Series inductance
τrr - 75 - µs
Ls - 1.4 - nH
SSeemmicioconndduuctcotor rGGrorouupp
22
Sep-109798-1-1919-081


Features BAR 63 ... W Silicon PIN Diode • PIN d iode for high speed switching of RF sig nal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz 3 2 1 VSO05561 BAR 63-04W BAR 63-05W BAR 63-06W Type BAR 63-04 W BAR 63-05W BAR 63-06W Marking Orderi ng Code G4s G5s G6s Q62702-A1261 Q62702 -A1267 Q62702-A1268 Pin Configuration 1 = A1 1 = A1 1 = C1 2 = C2 2 = A2 2 = C2 3 = C1/2 3 = A1/2 Package 3=C1/A2 S OT-323 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S ≤ 105 °C Junc tion temperature Operating temperature range Storage temperature Thermal Resis tance Junction - ambient 1) Symbol Va lue 50 100 250 150 - 55 ...+150 - 55 .. .+150 Unit V mA mW °C VR IF Ptot Tj Top Tstg RthJA RthJS ≤ 340 ≤ 180 K/W Junction - soldering point 1) Pa ckage mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconduct or Group 11 Sep-07-1998 1998-11-01 BA R 63 ... W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Keywords BAR63-06W, datasheet, pdf, Siemens Semiconductor Group, Silicon, PIN, Diode, PIN, diode, for, high, speed, switching, of, RF, signal, Low, forward, resistance, Very, low, capacitance, For, frequencies, up, to, 3, GHz, AR63-06W, R63-06W, 63-06W, BAR63-06, BAR63-0, BAR63-, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)