Silicon PIN Diode
BAR 64-03W
Silicon PIN Diode
l High voltage current controlled RF resistor for RF attenuator and swirches l Freqency r...
Description
BAR 64-03W
Silicon PIN Diode
l High voltage current controlled RF resistor for RF attenuator and swirches l Freqency range above 1 MHz l Low resistance and short carrier lifetime l For frequencies up to 3 GHz
Type BAR 64-03W Marking 2 Ordering Code (tape and reel) Q62702-A1045 Pin Configuration Package 1 2 C A SOD-323
1)
Maximum Ratings per Diode Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 25°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-ambient
1)
Symbol
BAR 64-03W 200 100 250 150 -55 +150°C -55...+150°C
Unit V mA mW °C °C °C
VR IF Ptot Tj Top Tstg
Rth JA
≤ 450
K/W
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A01, 22.07.94
BAR 64-03W
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol min.
Value typ. max.
Unit
DC Characteristics per Diode Breakdown voltage IR = 5 µA Forward voltage IF = 50 mA Diode capacitance VR = 20 V, f = 1 MHz Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance
V(BR)
200 0.23 12.5 2.1 0.85 1.55 2.0 -
V V 1.1 pF 0.35 Ω -20 3.8 1.35 µs nH -
VF CT rf
τL
Ls
Semiconductor Group
2
Edition A01, 22.07.94
BAR 64-03W
Forward resistance rf= f (IF) f = 100 MHz Diode capacitance CT= f (VR) f = 1 MHz.
Forward current IF = f (VF)
Semiconductor Gr...
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