Silicon RF Switching Diode Preliminary data (Low loss/ low capacitance PIN-Diode Band switch for TV-tuners)
BAR 65-07 Silicon RF Switching Diode
Preliminary data • Low loss, low capacitance PIN-Diode • Band switch for TV-tuners ...
Description
BAR 65-07 Silicon RF Switching Diode
Preliminary data Low loss, low capacitance PIN-Diode Band switch for TV-tuners Series diode for mobile communications transmit-receive switch Unconnected pair
Type BAR 65-07
Marking Ordering Code M UPON Q62702INQUIRY
Pin Configuration
Package
1 = C1 2 =C2 3 = A2 4 = A1 SOT-143
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 30 100 - 55 ... + 125 - 55 ... + 150 Unit V mA °C
VR IF Top Tstg
Semiconductor Group
1
Apr-30-1996
BAR 65-07
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
IR
0.93 20
nA V 1
VR = 20 V, TA = 25 °C
Forward voltage
VF
IF = 100 mA
AC characteristics Diode capacitance
CT
0.6 0.57 0.65 0.56 1.4 0.9 0.8 0.95 0.9 -
pF
VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz
Forward resistance
rf
-
Ω
IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz
Series inductance
Ls
-
nH
Semiconductor Group
2
Apr-30-1996
BAR 65-07
Forward current IF = f (VF)
Forward resistance rf = f(IF) f = 100MHz
10 3 mA
3.0
Ω
RF
2.4 2.2 2.0 1.8
IF
10 2
10 1
1.6 1.4 1.2 1.0
10
0
0.8 0.6 0.4
10
-1
400
500
600
700
800
mV 1000 VF
0.2 0.0 -1 10
10
0
mA IF
Diode capacitance CT = f (VR) f = 1MHz
Diode capacitance CT = f (VR) f = 100MHz
1.0
1.0
pF
pF
CT
0.8
CT
0.8
0.7
0.7
0.6
0.6
0.5
0.5
0.4
0.4
0.3 0.2 0 1 2 3 4 5 6 7 8 V 10
0.3 ...
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