Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BAS11; BAS12 Controlled avalanche rectifiers
Product specification Supersedes data of April 1996 1996 Sep 26
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack.
k a
BAS11; BAS12
These packages are hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
DESCRIPTION Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating Implotec™(1) technology.
(1) Implotec is a trademark of Philips.
MAM196
Marking code BAS11: S11. Marking code BAS12: S12.
Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BAS11 BAS12 VRWM working reverse voltage BAS11 BAS12 VR continuous reverse voltage BAS11 BAS12 IF(AV) average forward current averaged over any 20 ms period; Ttp = 75 °C; lead length = 10 mm; see Figs 2 and 4 averaged over any 20 ms period; Tamb = 30 °C; PCB mounting (see Fig.8); see Figs 3 and 4 IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax t = 10 µs square wave; f = 50 Hz; Tamb = 25 °C − − − 300 400 350 V V mA − − 300 400 V V PARAMETER repetitive peak reverse voltage − − 300 400 V V CONDITIONS MIN. MAX. UNIT
−
300
mA
−
4
A
PRRM Tstg Tj
repetitive peak reverse power dissipation storage temperature junction temperature
− −65 −65
75 +150 +150
W °C °C
1996 Sep 26
2
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BAS11 BAS12 IR trr reverse current reverse recovery time VR = VRRMmax; see Fig.6 VR = VRRMmax; Tj = 125 °C; see Fig.6 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.9 VR = 0 V; f = 1 MHz; see Fig.7 CONDITIONS IF = 300 mA; Tj = Tjmax; see Fig.5 IF = 300 mA; see Fig.5 IR = 0.1 mA 330 440 − − − MIN. − −
BAS11; BAS12
TYP. − −
MAX. 1.0 1.1 V V
UNIT
− − − − −
− − 250 10 1
V V nA µA µs
Cd
diode capacitance
−
20
−
pF
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.8. For more information please refer to the “General Part of associated Handbook”. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 180 340 UNIT K/W K/W
1996 Sep 26
3
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
GRAPHICAL DATA
MGD293
BAS11; BAS12
handbook, halfpage
0.6
handbook, halfpage
0.4
MGD295
IF(AV) (A)
IF(AV) (A) 0.3
0.4
0.2
0.2
0.1
0 0 40 80 120 Lead length 10 mm. a = 1.57; VR = VRRMmax; δ = 0.5. 200 160 Ttp (oC)
0 0 40 80 120
Device mounted as shown in Fig.8. a = 1.57; VR = VRRMmax; δ = 0.5.
200 160 Tamb (°C)
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
MGD292
MGD294
handbook, halfpage
0.5
handbook, halfpage
5
P (W) 0.4 a=3 2.5 2 1.57 1.42
IF (A)
4
0.3
3
0.2
2
0.1
1
0 0 0.1 0.2 0.3 0.4 IF(AV)(A)
0 0 1 2 VF (V) 3
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.4
Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
Solid line: Tj = 25 °C. Dotted line: Tj = 150 °C.
Fig.5
Forward current as a function of forward voltage; maximum values.
1996 Sep 26
4
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
2 10 handbook, halfpage
MGD297
handbook, halfpage
10
MGD296 - 1
IR (µA) 10
Cd (pF)
1
10−1
0
50
100
150
Tj (oC)
200
1 10−1
1
10
102
VR(V)
103
VR = VRRMmax.
f = 1 MHz; Tj = 25 °C.
Fig.6
Reverse current as a function of junction temperature; maximum values.
Fig.7
Diode capacitance as a function of reverse voltage; typical values.
handbook, halfpage
50 25
7 50
2 3
MGA200
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
1996 Sep 26
5
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
handbook, full pagewidth
DUT +
IF (A) 0.5 1Ω t rr
10 Ω
25 V 50 Ω 0 0.25 0.5 IR (A) 1.0
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.9 Test circuit and reverse recovery time waveform and definition.
1996 Sep 26
6
Not rec.