BAS140

Silicon Schottky Diode BAS 140W q q q q General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code (tape and reel) Q62702-A1071 Pin Configuration 1 2 A C Marking Package BAS 140W 4 SOD-323 Maximum Ratings Parameter Reverse voltage Forward current Surge forward current, t ≤ 10 ms Total power dissipation TS ≤ 113 °C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient1) Junction-soldering point Symbol Values 40 120 200 250 – 55 … + 125 – 55 … + 150 Unit V mA mA mW °C °C VR IF IFSM Ptot Top Tstg Rth JA Rth JS ≤ 260 ≤ 150 K/W K/W 1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu. Semiconductor Group 1 05.95 BAS 140W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage I(BR) = 10 µA Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 30 V VR = 40 V Diode capacitance Value typ. max. Unit V(BR) 40 – 310 450 720 – – 3 10 2 – V mV 250 350 600 380 500 1000 µA – – 1 10 pF – 5 Ω – – – nH – VF IR CT RF LS VR = 0 V, f = 1 MHz Differential forward resistance IF = 10 mA, f = 10 kHz Series inductance Semiconductor Group 2 BAS 140W Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) Differential forward resistance RF = f (IF) Semiconductor Group 3 BAS 140W Forward current IF = f (TA*, TS) * Package mount...