BAS16-03W

BAS 16-03W Silicon Switching Diode Preliminary data For high-speed switching applications 2 1 VPS05176 Type BAS 16-03W Marking B Ordering Code Q62702-A1231 Pin Configuration 1=A 2=C Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 111 °C Junction temperature Storage temperature Symbol Value 75 85 250 4.5 250 150 - 65 ...+150 mA A mW °C Unit V VR VRM IF I FS Ptot Tj T stg Thermal Resistance Junction - ambient 1) RthJA RthJS ≤ 235 ≤ 155 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Mar-13-1998 1998-11-01 BAS 16-03W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) VF 75 V mV I (BR) = 100 µA Forward voltage I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA Reverse current - - 715 855 1000 1250 1 µA IR IR - VR = 70 V Reverse current VR = 25 V, TA = 150 °C VR = 75 V, TA = 150 °C Forward recovery voltage - - 30 50 1.75 V Vfr - I F = 10 mA, t p = 20 ns AC characteristics Diode capacitance CD t rr - - 2 6 pF ns VR = 0 V, f = 20 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00017 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i =...