BAS16LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS16LT1/D Switching Diode 3 CATHODE 1 ANODE BAS16LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 75 200 500 Unit Vdc mAdc mAdc 1 2 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) DEVICE MARKING BAS16LT1 = A6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 Ω) Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 IR — — — V(BR) VF — — — — CD VFR trr QS — — — — 715 855 1000 1250 2.0 1.75 6.0 45 pF Vdc ns pC 75 1.0 50 30 — Vdc mV µAdc   0....