BAS17

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS17 Low-voltage stabistor Product data sheet Supersedes data of 1999 May 31 2003 Mar 25 NXP Semiconductors Low-voltage stabistor Product data sheet BAS17 FEATURES Low-voltage stabilization Forward voltage range: 580 to 960 mV Total power dissipation: max. 250 mW. APPLICATIONS Low-voltage stabilization e.g. – Bias stabilizer in class-B output stages – Clipping – Clamping – Meter protection. DESCRIPTION Low-voltage stabilization diode in a small SOT23 plastic package. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode handbook, halfpa2ge 1 2 n.c. 3 1 3 MAM185 MARKING TYPE NUMBER BAS17 MARKING CODE(1) ∗A9 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. Fig.1 Simplified outline (SOT23), pin configuration and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VR continuous reverse voltage IF continuous forward current Ptot total power dissipation Tstg storage temperature Tj junction temperature CONDITIONS Tamb = 25 °C MIN. − − − −65 − MAX. 5 200 250 +150 150 UNIT V mA mW °C °C 2003 Mar 25 2 NXP Semiconductors Low-voltage stabistor Product data sheet BAS17 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR reverse current rdif differential resistance SF temperature coefficient Cd diode capacitance CONDITIONS see Fig.2 IF = 0.1 mA ...