Low-voltage stabistor
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS17 Low-voltage stabistor
Product data sheet Supersedes dat...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS17 Low-voltage stabistor
Product data sheet Supersedes data of 1999 May 31
2003 Mar 25
NXP Semiconductors
Low-voltage stabistor
Product data sheet
BAS17
FEATURES Low-voltage stabilization Forward voltage range: 580 to 960 mV Total power dissipation: max. 250 mW.
APPLICATIONS Low-voltage stabilization e.g.
– Bias stabilizer in class-B output stages – Clipping – Clamping – Meter protection.
DESCRIPTION Low-voltage stabilization diode in a small SOT23 plastic package.
PINNING
PIN 1 2 3
DESCRIPTION anode not connected cathode
handbook, halfpa2ge
1
2 n.c.
3
1 3
MAM185
MARKING
TYPE NUMBER BAS17
MARKING CODE(1) ∗A9
Note
1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China.
Fig.1 Simplified outline (SOT23), pin configuration and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VR continuous reverse voltage IF continuous forward current Ptot total power dissipation Tstg storage temperature Tj junction temperature
CONDITIONS Tamb = 25 °C
MIN.
− − − −65 −
MAX. 5 200 250 +150 150
UNIT
V mA mW °C °C
2003 Mar 25
2
NXP Semiconductors
Low-voltage stabistor
Product data sheet
BAS17
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
IR reverse current rdif differential resistance
SF temperature coefficient Cd diode capacitance
CONDITIONS
see Fig.2 IF = 0.1 mA ...
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