BAS28

BAS28 SURFACE MOUNT SILICON DUAL, ISOLATED HIGH SPEED SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded SOT-143 surface mount case. This device is designed for high speed switching applications. MARKING CODE: A61 or JTW SOT-143 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0ms Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFRM IFSM IFSM IFSM PD TJ, Tstg ΘJA 75 85 250 500 4.0 2.0 1.0 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=25V, TA=150°C 30 IR VR=75V 1.0 IR VR=75V, TA=150°C 50 VF IF=1.0mA 715 VF IF=10mA 855 VF IF=50mA 1.00 VF IF=150mA 1.25 CJ VR=0, f=1.0MHz 2.0 trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 6.0 Qs IF=10mA, VR=5.0V, RL=500Ω 45 VFR IF=10mA, tr=20ns 1.75 UNITS V V mA mA A A A mW °C °C/W UNITS μA μA μA mV mV V V pF ns pC V R8 (19-September 2018) BAS28 SURFACE MOUNT SILICON DUAL, ISOLATED HIGH SPEED SWITCHING DIODES SOT-143 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Cathod...