BAS28W

BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes 3 4 2 1 VPS05605 Type BAS 28W Marking Ordering Code JTs Q62702-A3466 Pin Configuration Package 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 103 °C Junction temperature Storage temperature Symbol Value 75 85 200 4.5 250 150 - 65 ...+150 mA A mW °C Unit V VR VRM IF I FS Ptot Tj T stg Thermal Resistance Junction - ambient 1) RthJA RthJS ≤ 460 ≤ 190 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Semiconductor Group 11 Mar-16-1998 1998-11-01 BAS 28W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) VF 85 V mV I (BR) = 10 µA Forward voltage I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA Reverse current - - 715 855 1000 1250 1 µA IR IR - VR = 75 V Reverse current VR = 25 V, TA = 150 °C VR = 75 V, TA = 150 °C AC characteristics Diode capacitance - - 30 50 CD trr - - 2 6 pF ns VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Oscillograph: R = ...