BAS35

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes Product data sheet Supersedes data of 2001 Oct 10 2003 Mar 20 NXP Semiconductors General purpose controlled avalanche (double) diodes Product data sheet BAS29; BAS31; BAS35 FEATURES Small plastic SMD package Switching speed: max. 50 ns General application Continuous reverse voltage: max. 90 V Repetitive peak reverse voltage: max. 110 V Repetitive peak forward current: max. 600 mA Repetitive peak reverse current: max. 600 mA. PINNING DESCRIPTION PIN BAS29 BAS31 BAS35 1 anode anode cathode (k1) 2 not connected cathode cathode (k2) 3 cathode common connection common anode APPLICATIONS General purpose switching in e.g. surface mounted circuits. handbook, halfpa2ge 1 2 1 DESCRIPTION General purpose switching diodes fabricated in planar technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in series. The BAS35 has two diodes with a common anode. MARKING TYPE NUMBER BAS29 BAS31 BAS35 MARKING CODE(1) L20 or ∗A8 L21 or ∗V1 L22 or ∗V2 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. 3 a. Simplified outline. 3 c. BAS31 diode. 2 n.c. 12 1 3 b. BAS29 diode. 3 d. BAS35 diode. MAM233 Fig.1 Simplified outline (SOT23) and symbols. 2003 Mar 20 2 NXP Semiconductors General purpose controlled ...